In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current

J. Shiogai, M. Ciorga, M. Utz, D. Schuh, M. Kohda, D. Bougeard, T. Nojima, D. Weiss, J. Nitta

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5 Citations (Scopus)

Abstract

We investigate the angular dependence of the tunneling anisotropic magnetoresistance in (Ga,Mn)As/n-GaAs spin Esaki diodes in the regime where the tunneling process is dominated by the excess current through midgap states in (Ga,Mn)As. We compare it to similar measurements performed in the regime of band-to-band tunneling. Whereas the latter show biaxial symmetry typical for magnetic anisotropy observed in (Ga,Mn)As samples, the former is dominated by uniaxial anisotropy along the 〈110〉 axes.

Original languageEnglish
Article number262402
JournalApplied Physics Letters
Volume106
Issue number26
DOIs
Publication statusPublished - 2015 Jun 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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