In-plane topological p-n junction in the three-dimensional topological insulator Bi2-x Sbx Te3-y Sey

Ngoc Han Tu; Yoichi Tanabe; Yosuke Satake; Khuong Kim Huynh; Katsumi Tanigaki

doi:10.1038/ncomms13763

In-plane topological p-n junction in the three-dimensional topological insulator Bi_2-x Sb_x Te_3-y Se_y

Ngoc Han Tu, Yoichi Tanabe, Yosuke Satake, Khuong Kim Huynh, Katsumi Tanigaki

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi 2 'x Sb x Te 3 'y Se y thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi 2 'x Sb x Te 3 'y Se y on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

Original language	English
Article number	13763
Journal	Nature communications
Volume	7
DOIs	https://doi.org/10.1038/ncomms13763
Publication status	Published - 2016 Dec 9

ASJC Scopus subject areas

Chemistry(all)
Biochemistry, Genetics and Molecular Biology(all)
Physics and Astronomy(all)

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title = "In-plane topological p-n junction in the three-dimensional topological insulator Bi2-x Sbx Te3-y Sey",

abstract = "A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi 2 'x Sb x Te 3 'y Se y thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi 2 'x Sb x Te 3 'y Se y on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.",

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AU - Tu, Ngoc Han

AU - Tanabe, Yoichi

AU - Satake, Yosuke

AU - Huynh, Khuong Kim

AU - Tanigaki, Katsumi

PY - 2016/12/9

Y1 - 2016/12/9

N2 - A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi 2 'x Sb x Te 3 'y Se y thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi 2 'x Sb x Te 3 'y Se y on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

AB - A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi 2 'x Sb x Te 3 'y Se y thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi 2 'x Sb x Te 3 'y Se y on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

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In-plane topological p-n junction in the three-dimensional topological insulator Bi_2-x Sb_x Te_3-y Se_y

Abstract

ASJC Scopus subject areas

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