In-plane grain orientation alignment of polycrystalline silicon films by normal and oblique-angle ion implantations

Anri Nakajima, Shin Ichiro Kuroki, Shuntaro Fujii, Takashi Ito

Research output: Contribution to journalArticle

Abstract

Random crystallographic orientations of polycrystalline silicon (poly-Si) grains in the films grown on a SiO 2 substrate by chemical vapor deposition were laterally aligned by maintaining the {110} restricted pillar texture through double Si + self-ion implantations. The in-plane X-ray diffraction pattern and rocking curve clearly indicate the lateral alignment. The oblique-angle Si + self-ion implantation was also found to be useful for increasing the amount of the {110} pillar texture. The electron backscatter diffraction (EBSD) pattern supports the increase in the amount of the {110} pillar texture and the lateral crystal orientation alignment. The transmission electron micrography and EBSD results also suggest that grain size is increased by double Si + self-ion implantations. Although further systematic optimization may be required, the technique will be useful for improving the electrical characteristics of poly-Si devices for future electronic systems on insulators.

Original languageEnglish
Article number04DH03
JournalJapanese journal of applied physics
Volume51
Issue number4 PART 2
DOIs
Publication statusPublished - 2012 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'In-plane grain orientation alignment of polycrystalline silicon films by normal and oblique-angle ion implantations'. Together they form a unique fingerprint.

  • Cite this