TY - JOUR
T1 - In-plane grain orientation alignment of polycrystalline silicon films by normal and oblique-angle ion implantations
AU - Nakajima, Anri
AU - Kuroki, Shin Ichiro
AU - Fujii, Shuntaro
AU - Ito, Takashi
PY - 2012/4/1
Y1 - 2012/4/1
N2 - Random crystallographic orientations of polycrystalline silicon (poly-Si) grains in the films grown on a SiO 2 substrate by chemical vapor deposition were laterally aligned by maintaining the {110} restricted pillar texture through double Si + self-ion implantations. The in-plane X-ray diffraction pattern and rocking curve clearly indicate the lateral alignment. The oblique-angle Si + self-ion implantation was also found to be useful for increasing the amount of the {110} pillar texture. The electron backscatter diffraction (EBSD) pattern supports the increase in the amount of the {110} pillar texture and the lateral crystal orientation alignment. The transmission electron micrography and EBSD results also suggest that grain size is increased by double Si + self-ion implantations. Although further systematic optimization may be required, the technique will be useful for improving the electrical characteristics of poly-Si devices for future electronic systems on insulators.
AB - Random crystallographic orientations of polycrystalline silicon (poly-Si) grains in the films grown on a SiO 2 substrate by chemical vapor deposition were laterally aligned by maintaining the {110} restricted pillar texture through double Si + self-ion implantations. The in-plane X-ray diffraction pattern and rocking curve clearly indicate the lateral alignment. The oblique-angle Si + self-ion implantation was also found to be useful for increasing the amount of the {110} pillar texture. The electron backscatter diffraction (EBSD) pattern supports the increase in the amount of the {110} pillar texture and the lateral crystal orientation alignment. The transmission electron micrography and EBSD results also suggest that grain size is increased by double Si + self-ion implantations. Although further systematic optimization may be required, the technique will be useful for improving the electrical characteristics of poly-Si devices for future electronic systems on insulators.
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U2 - 10.1143/JJAP.51.04DH03
DO - 10.1143/JJAP.51.04DH03
M3 - Article
AN - SCOPUS:84860355498
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04DH03
ER -