In-plane electronic anisotropy in the antiferromagnetic orthorhombic phase of isovalent-substituted Ba(Fe1-xRux)2As2

L. Liu, T. Mikami, S. Ishida, K. Koshiishi, K. Okazaki, T. Yoshida, H. Suzuki, M. Horio, L. C.C. Ambolode, J. Xu, H. Kumigashira, K. Ono, M. Nakajima, K. Kihou, C. H. Lee, A. Iyo, H. Eisaki, T. Kakeshita, S. Uchida, A. Fujimori

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7 Citations (Scopus)


We have studied the anisotropy in the in-plane resistivity and the electronic structure of isovalent Ru-substituted BaFe2As2 in the antiferromagnetic-orthorhombic phase using well-annealed crystals. The anisotropy in the residual resistivity component increases in proportion to the Ru dopant concentration, as in the case of Co-doped compounds. On the other hand, both the residual resistivity and the resistivity anisotropy induced by isovalent Ru substitution are found to be 1 order of magnitude smaller than those induced by heterovalent Co substitution. Combined with angle-resolved photoemission spectroscopy results, which show almost the same anisotropic band structure for both the parent and the Ru-substituted compounds, we confirm the scenario that the anisotropy in the residual resistivity arises from anisotropic impurity scattering in the magnetostructurally ordered phase rather than directly from the anisotropic band structure of that phase.

Original languageEnglish
Article number094503
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number9
Publication statusPublished - 2015 Sep 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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