Fe-doped D0 19 Mn 3 Ga films were studied in terms of both their in-plane and perpendicular exchange bias field, H ex , induced in the attached ferromagnetic layer. The (Mn,Fe) 3 Ga films were deposited on a Si substrate with a Ru buffer layer with a (0 0 0 1)-oriented single D0 19 phase at room temperature. Consequently, in-plane and perpendicular H ex were measured in bilayers with a CoFe layer and a [Co/Pt] multilayer, respectively. In-plane H ex was found to be dependent on the Fe compositions, showing the largest value of 446 Oe at 120 K for 10-nm-thick Mn 1.99 Fe 0.41 Ga. Perpendicular H ex was dependent on not only the Fe compositions but also the thickness of (Mn,Fe) 3 Ga, exhibiting the maximum of 163 Oe at 120 K for 5-nm-thick Mn 1.96 Fe 0.67 Ga. The median blocking temperature of both in-plane and perpendicular H ex systems for 10-nm-thick (Mn,Fe) 3 Ga were measured to be 235 and 240 K, respectively. The measured in-plane and perpendicular H ex induced by (Mn,Fe) 3 Ga are generated by a spin structural change from noncollinear to noncoplaner in ab-plane as expected from the previous theoretical study [A. Kundu and S. Ghosh, Intermetallics 93, 209 (2018)].
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics