In diffusion in B2-type ordered NiAI intermetallic compound

Y. Minamino; Y. Koizumi; Y. Inui

doi:10.4028/www.scientific.net/ddf.194-199.517

In diffusion in B2-type ordered NiAI intermetallic compound

Y. Minamino, Y. Koizumi, Y. Inui

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The diffusion coefficients of In in the NiAl, D_In(NiAl), were determined in the wide range of concentration by using the diffusion couple method. The diffusion couples consist of the NiAl and the NiAl with small amount of In. The D_In(NiAl)'s have the minimum values near the stoichiometric concentration, while the activation energy and frequency factor have the maximum values. The data of this work strongly support that the Triple Defect mechanism is dominant at the stoichiometry and the diffusion at off-stoichiometry is largely contributed by the structural defects.

Original language	English
Pages (from-to)	517-522
Number of pages	6
Journal	Defect and Diffusion Forum
Issue number	194-199 PART 1
DOIs	https://doi.org/10.4028/www.scientific.net/ddf.194-199.517
Publication status	Published - 2001

Keywords

Activation Energy
Anti-Site Atom
Atomic Jumps
Compounds
Diffusion
Indium, NiAl
Vacancies

ASJC Scopus subject areas

Radiation
Materials Science(all)
Condensed Matter Physics

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@article{719083d09a0c468fb6ac4e6995174293,

title = "In diffusion in B2-type ordered NiAI intermetallic compound",

abstract = "The diffusion coefficients of In in the NiAl, DIn(NiAl), were determined in the wide range of concentration by using the diffusion couple method. The diffusion couples consist of the NiAl and the NiAl with small amount of In. The DIn(NiAl)'s have the minimum values near the stoichiometric concentration, while the activation energy and frequency factor have the maximum values. The data of this work strongly support that the Triple Defect mechanism is dominant at the stoichiometry and the diffusion at off-stoichiometry is largely contributed by the structural defects.",

keywords = "Activation Energy, Anti-Site Atom, Atomic Jumps, Compounds, Diffusion, Indium, NiAl, Vacancies",

author = "Y. Minamino and Y. Koizumi and Y. Inui",

year = "2001",

doi = "10.4028/www.scientific.net/ddf.194-199.517",

language = "English",

pages = "517--522",

journal = "Defect and Diffusion Forum",

issn = "1012-0386",

publisher = "Trans Tech Publications",

number = "194-199 PART 1",

}

TY - JOUR

T1 - In diffusion in B2-type ordered NiAI intermetallic compound

AU - Minamino, Y.

AU - Koizumi, Y.

AU - Inui, Y.

PY - 2001

Y1 - 2001

N2 - The diffusion coefficients of In in the NiAl, DIn(NiAl), were determined in the wide range of concentration by using the diffusion couple method. The diffusion couples consist of the NiAl and the NiAl with small amount of In. The DIn(NiAl)'s have the minimum values near the stoichiometric concentration, while the activation energy and frequency factor have the maximum values. The data of this work strongly support that the Triple Defect mechanism is dominant at the stoichiometry and the diffusion at off-stoichiometry is largely contributed by the structural defects.

AB - The diffusion coefficients of In in the NiAl, DIn(NiAl), were determined in the wide range of concentration by using the diffusion couple method. The diffusion couples consist of the NiAl and the NiAl with small amount of In. The DIn(NiAl)'s have the minimum values near the stoichiometric concentration, while the activation energy and frequency factor have the maximum values. The data of this work strongly support that the Triple Defect mechanism is dominant at the stoichiometry and the diffusion at off-stoichiometry is largely contributed by the structural defects.

KW - Activation Energy

KW - Anti-Site Atom

KW - Atomic Jumps

KW - Compounds

KW - Diffusion

KW - Indium, NiAl

KW - Vacancies

UR - http://www.scopus.com/inward/record.url?scp=0035780691&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035780691&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/ddf.194-199.517

DO - 10.4028/www.scientific.net/ddf.194-199.517

M3 - Article

AN - SCOPUS:0035780691

SP - 517

EP - 522

JO - Defect and Diffusion Forum

JF - Defect and Diffusion Forum

SN - 1012-0386

IS - 194-199 PART 1

ER -