Abstract
The diffusion coefficients of In in the NiAl, DIn(NiAl), were determined in the wide range of concentration by using the diffusion couple method. The diffusion couples consist of the NiAl and the NiAl with small amount of In. The DIn(NiAl)'s have the minimum values near the stoichiometric concentration, while the activation energy and frequency factor have the maximum values. The data of this work strongly support that the Triple Defect mechanism is dominant at the stoichiometry and the diffusion at off-stoichiometry is largely contributed by the structural defects.
| Original language | English |
|---|---|
| Pages (from-to) | 517-522 |
| Number of pages | 6 |
| Journal | Defect and Diffusion Forum |
| Issue number | 194-199 PART 1 |
| DOIs | |
| Publication status | Published - 2001 |
Keywords
- Activation Energy
- Anti-Site Atom
- Atomic Jumps
- Compounds
- Diffusion
- Indium, NiAl
- Vacancies
ASJC Scopus subject areas
- Radiation
- Materials Science(all)
- Condensed Matter Physics