In-band spurious attenuation in LTE-class RFIC chip using a soft magnetic thin film

Sho Muroga, Yasushi Endo, Tetsuo Ito, Satoshi Tanaka, Motoki Murakami, Kazuaki Hori, Satoru Takahashi, Azuma Naoya, Tetsuya Makita, Satoshi Imai, Makoto Nagata, Masahiro Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

A long term evolution (LTE)-class CMOS radio frequency integrated circuit (RFIC) receiver test element group (TEG) chip is developed in our project for the next generation cell phone handsets in order to clarify the on-chip-level noise coupling and demonstrate the noise attenuation using the soft magnetic thin film as an on-chip electromagnetic noise suppressor. The TEG chip equips a noise generator and a RF receiver block. The RF block amplifies and demodulates transmitted signals to IQ signals. A Co85Zr3Nb 12 soft magnetic thin film is integrated onto the TEG chip as a noise suppressor. In this report, the noise generator is driven by a clock signal of 124.803 MHz and generates 17th harmonics of 2,165 MHz conflicts with the LTE band 1 (2,110-2,170 MHz). As a result, the in-band digital noise was suppressed 5-20 dB by the Co-Zr-Nb thin film as an integrated noise suppressor.

Original languageEnglish
Title of host publicationProceedings - 2013 IEEE International Symposium on Electromagnetic Compatibility, EMC 2013
Pages657-661
Number of pages5
DOIs
Publication statusPublished - 2013 Dec 1
Event2013 IEEE International Symposium on Electromagnetic Compatibility, EMC 2013 - Denver, CO, United States
Duration: 2013 Aug 52013 Aug 9

Publication series

NameIEEE International Symposium on Electromagnetic Compatibility
ISSN (Print)1077-4076
ISSN (Electronic)2158-1118

Other

Other2013 IEEE International Symposium on Electromagnetic Compatibility, EMC 2013
CountryUnited States
CityDenver, CO
Period13/8/513/8/9

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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