Impurity-induced Mott transitions in partially filled antiferromagnetic states

Hisatoshi Yokoyama, Ryo Sato, Kenji Kobayashi

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

In view of cuprate superconductors, effects of point-type repulsive impurity potential (V) on partially filled antiferromagnetic (AF) states are studied for a strongly correlated square-lattice Hubbard model (U/t = 12) with a diagonal transfer (t′ =-0.3t), using a variational Monte Carlo method. To simplify interpretation, here we focus on the case of δ imp = δ, where δ imp and δ are densities of impurity sites and doped holes, respectively, with δ = 0.04-0.20. As a result, a filling-control-type Mott transition occurs at V = V M (∼ 2t) irrespective of δ; a partially filled AF state becomes Mott insulating for V > V M. Such impurity-induced Mott transitions extensively appear beyond the above parameter settings.

Original languageEnglish
Article number012014
JournalJournal of Physics: Conference Series
Volume1054
Issue number1
DOIs
Publication statusPublished - 2018 Jul 26
Event30th International Symposium on Superconductivity, ISS 2017 - Tokyo, Japan
Duration: 2017 Dec 132017 Dec 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Impurity-induced Mott transitions in partially filled antiferromagnetic states'. Together they form a unique fingerprint.

Cite this