Impurity effects on the morphology of fresh dislocations in GaAs

Ichiro Yonenaga, K. Minowa, K. Sumino

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The morphology of dislocations freshly introduced in impurity-doped GaAs under applied stress is investigated by means of X-ray topography. α dislocations are preferentially generated in Si-doped GaAs from surface irregularities while β dislocations are generated in Zn-doped GaAs, both trailing long screw dislocations behind them. The morphology of dislocations generated in In-doped GaAs depends on the magnitudes of the applied stress and temperature. The characteristics are interpreted as being related to the strong interaction between α dislocations and In impurity.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Inst of Physics Publ Ltd
Pages129-134
Number of pages6
Edition117
ISBN (Print)0854984062
Publication statusPublished - 1991 Dec 1
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: 1991 Mar 251991 Mar 28

Publication series

NameInstitute of Physics Conference Series
Number117
ISSN (Print)0373-0751

Other

OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl
Period91/3/2591/3/28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Yonenaga, I., Minowa, K., & Sumino, K. (1991). Impurity effects on the morphology of fresh dislocations in GaAs. In Institute of Physics Conference Series (117 ed., pp. 129-134). (Institute of Physics Conference Series; No. 117). Publ by Inst of Physics Publ Ltd.