Impurity effects on the low-temperature properties of UAl2

T. Kuwai, H. Enami, Y. Miyako, C. C. Paulsen, J. Voiron, J. L. Tholence, T. Shikama

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We have measured the magnetization of pure UAl2 below 1 K down to 0.1 K and the effects of impurities on the susceptibility and specific heat in the temperature range 2-370 K for the susceptibility and 1.5-20 K for the specific heat. The magnetization of UAl2 shows a slight upturn in the curvature below 1 K with respect to the applied magnetic field. This behavior is quite similar to that of CeRu2Si2 below the critical field of the metamagnetic-like jump. Silicon impurities suppress the enhancement of the electronic specific heat coefficient, in contrast with the case of praseodymium.

Original languageEnglish
Pages (from-to)769-771
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Volume186-188
Issue numberC
DOIs
Publication statusPublished - 1993 May 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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