Abstract
The dynamic activity of dislocations in Si doped with acceptor, donor and neutral impurities to various concentrations up to 2.5 × 1020 cm-3 is investigated by using the etch-pit technique, in comparison with that in undoped Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B, P and As impurities exceeds 1 × 1019 cm-3, which is interpreted in terms of dislocation locking due to impurity segregation. Dislocation velocity increases on increasing the concentration in B, P, As and Sb impurities.
Original language | English |
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Pages (from-to) | 13179-13183 |
Number of pages | 5 |
Journal | Journal of Physics Condensed Matter |
Volume | 14 |
Issue number | 48 |
DOIs | |
Publication status | Published - 2002 Dec 16 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics