Abstract
The dynamic activity of dislocations in Si doped with acceptor, donor and neutral impurities to various concentrations up to 2.5 × 1020 cm-3 is investigated by using the etch-pit technique, in comparison with that in undoped Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B, P and As impurities exceeds 1 × 1019 cm-3, which is interpreted in terms of dislocation locking due to impurity segregation. Dislocation velocity increases on increasing the concentration in B, P, As and Sb impurities.
| Original language | English |
|---|---|
| Pages (from-to) | 13179-13183 |
| Number of pages | 5 |
| Journal | Journal of Physics Condensed Matter |
| Volume | 14 |
| Issue number | 48 |
| DOIs | |
| Publication status | Published - 2002 Dec 16 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
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Cite this
Yonenaga, I. (2002). Impurity effects on dislocation activities in Si. Journal of Physics Condensed Matter, 14(48), 13179-13183. https://doi.org/10.1088/0953-8984/14/48/366