Impurity effects on dislocation activities in Si

I. Yonenaga

doi:10.1088/0953-8984/14/48/366

Impurity effects on dislocation activities in Si

I. Yonenaga

Materials Design Division

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The dynamic activity of dislocations in Si doped with acceptor, donor and neutral impurities to various concentrations up to 2.5 × 10²⁰ cm^-3 is investigated by using the etch-pit technique, in comparison with that in undoped Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B, P and As impurities exceeds 1 × 10¹⁹ cm^-3, which is interpreted in terms of dislocation locking due to impurity segregation. Dislocation velocity increases on increasing the concentration in B, P, As and Sb impurities.

Original language	English
Pages (from-to)	13179-13183
Number of pages	5
Journal	Journal of Physics Condensed Matter
Volume	14
Issue number	48
DOIs	https://doi.org/10.1088/0953-8984/14/48/366
Publication status	Published - 2002 Dec 16

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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title = "Impurity effects on dislocation activities in Si",

abstract = "The dynamic activity of dislocations in Si doped with acceptor, donor and neutral impurities to various concentrations up to 2.5 × 1020 cm-3 is investigated by using the etch-pit technique, in comparison with that in undoped Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B, P and As impurities exceeds 1 × 1019 cm-3, which is interpreted in terms of dislocation locking due to impurity segregation. Dislocation velocity increases on increasing the concentration in B, P, As and Sb impurities.",

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AB - The dynamic activity of dislocations in Si doped with acceptor, donor and neutral impurities to various concentrations up to 2.5 × 1020 cm-3 is investigated by using the etch-pit technique, in comparison with that in undoped Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B, P and As impurities exceeds 1 × 1019 cm-3, which is interpreted in terms of dislocation locking due to impurity segregation. Dislocation velocity increases on increasing the concentration in B, P, As and Sb impurities.

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