Impurity effects on dislocation activities in Si

I. Yonenaga

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The dynamic activity of dislocations in Si doped with acceptor, donor and neutral impurities to various concentrations up to 2.5 × 1020 cm-3 is investigated by using the etch-pit technique, in comparison with that in undoped Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B, P and As impurities exceeds 1 × 1019 cm-3, which is interpreted in terms of dislocation locking due to impurity segregation. Dislocation velocity increases on increasing the concentration in B, P, As and Sb impurities.

Original languageEnglish
Pages (from-to)13179-13183
Number of pages5
JournalJournal of Physics Condensed Matter
Volume14
Issue number48
DOIs
Publication statusPublished - 2002 Dec 16

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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