Impurity effect on the line shape of the photoluminescence spectrum of modulation-doped quantum wells

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12 Citations (Scopus)

Abstract

The line shape of the photoluminescence spectrum is calculated for a two-dimensional model system of non-interacting particles in the presence of impurities. The photoluminescence cross section is analysed by perturbation theory within the self-consistent born approximation. The effect of a strong magnetic field on the spectrum is also investigated. The line shapes turn out to be sensitive to the nature of the scatterers especially in the high- magnetic-field limit. Experimental photoluminescence spectra thus open the possibility of distinguishing between charged impurities and neutral scatterers like surface roughness or alloy disorder. Numerical results are presented for GaAs-Ga1-xAlxAs modulation-doped quantum wells with short-range scattering potentials fitted to mobility data. The calculated zero-field broadening is consistent with published experimental results if charged impurity scattering is assumed.

Original languageEnglish
Pages (from-to)1553-1566
Number of pages14
JournalJournal of Physics C: Solid State Physics
Volume19
Issue number10
DOIs
Publication statusPublished - 1986 Apr 10
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Engineering(all)
  • Physics and Astronomy(all)

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