Impurity-doping-induced ferroelectricity in the frustrated antiferromagnet CuFe O2

S. Seki, Y. Yamasaki, Y. Shiomi, S. Iguchi, Y. Onose, Y. Tokura

Research output: Contribution to journalArticle

140 Citations (Scopus)

Abstract

Dielectric responses have been investigated on the triangular-lattice antiferromagnet CuFe O2 and its site-diluted analogs Cu Fe1-x Alx O2 (x=0.01 and 0.02) with and without the application of the magnetic field. We have found a ferroelectric behavior at zero magnetic field for x=0.02. At any doping level, the onset field of the ferroelectricity always coincides with that of the noncollinear magnetic structure while the transition field dramatically decreases to zero field with Al doping. The results imply the further possibility of producing the ferroelectricity by modifying frustrated spin structure in terms of site doping and external magnetic field.

Original languageEnglish
Article number100403
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number10
DOIs
Publication statusPublished - 2007 Mar 27

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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