Impurity doping in molecular layer epitaxy of GaAs and its application to ultrashallow sidewall tunnel junctions

Takeo Ohno; Yutaka Oyama; Kazuyuki Saito; Ken Suto; Jun ichi Nishizawa

doi:10.1016/j.tsf.2004.06.056

Impurity doping in molecular layer epitaxy of GaAs and its application to ultrashallow sidewall tunnel junctions

Takeo Ohno, Yutaka Oyama, Kazuyuki Saito, Ken Suto, Jun ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Impurity-doped p⁺ and n⁺-GaAs epitaxial thin layers were grown on (001) GaAs substrates by molecular layer epitaxy (MLE) using an intermittent supply of AsH₃ and TEG in an ultra high vacuum. The surface stoichiometry before the introduction of the impurity precursor was controlled by changing the gas supply sequences and supply time. It was shown that the incorporation of Be is extremely enhanced when the layer is exposed to Be(MeCp)₂ after TEG supply. When DETe was supplied to a GaAs surface covered with S, the incorporation of Te was enhanced and it was shown that the concentration of Te increased with increasing S coverage. Be doping and alternate Te and S doping were also applied for the fabrication of ultrashallow sidewall tunnel junctions. As a result, these tunnel junctions have shown record peak current densities of up to 31,000 A/cm² at RT.

Original language	English
Pages (from-to)	123-127
Number of pages	5
Journal	Thin Solid Films
Volume	464-465
DOIs	https://doi.org/10.1016/j.tsf.2004.06.056
Publication status	Published - 2004 Oct 1

Keywords

Atomic layer epitaxy
GaAs
Impurity doping
Surface stoichiometry
Tunnel junction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Impurity doping in molecular layer epitaxy of GaAs and its application to ultrashallow sidewall tunnel junctions",

abstract = "Impurity-doped p+ and n+-GaAs epitaxial thin layers were grown on (001) GaAs substrates by molecular layer epitaxy (MLE) using an intermittent supply of AsH3 and TEG in an ultra high vacuum. The surface stoichiometry before the introduction of the impurity precursor was controlled by changing the gas supply sequences and supply time. It was shown that the incorporation of Be is extremely enhanced when the layer is exposed to Be(MeCp)2 after TEG supply. When DETe was supplied to a GaAs surface covered with S, the incorporation of Te was enhanced and it was shown that the concentration of Te increased with increasing S coverage. Be doping and alternate Te and S doping were also applied for the fabrication of ultrashallow sidewall tunnel junctions. As a result, these tunnel junctions have shown record peak current densities of up to 31,000 A/cm2 at RT.",

keywords = "Atomic layer epitaxy, GaAs, Impurity doping, Surface stoichiometry, Tunnel junction",

author = "Takeo Ohno and Yutaka Oyama and Kazuyuki Saito and Ken Suto and Nishizawa, {Jun ichi}",

year = "2004",

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doi = "10.1016/j.tsf.2004.06.056",

language = "English",

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T1 - Impurity doping in molecular layer epitaxy of GaAs and its application to ultrashallow sidewall tunnel junctions

AU - Ohno, Takeo

AU - Oyama, Yutaka

AU - Saito, Kazuyuki

AU - Suto, Ken

AU - Nishizawa, Jun ichi

PY - 2004/10/1

Y1 - 2004/10/1

N2 - Impurity-doped p+ and n+-GaAs epitaxial thin layers were grown on (001) GaAs substrates by molecular layer epitaxy (MLE) using an intermittent supply of AsH3 and TEG in an ultra high vacuum. The surface stoichiometry before the introduction of the impurity precursor was controlled by changing the gas supply sequences and supply time. It was shown that the incorporation of Be is extremely enhanced when the layer is exposed to Be(MeCp)2 after TEG supply. When DETe was supplied to a GaAs surface covered with S, the incorporation of Te was enhanced and it was shown that the concentration of Te increased with increasing S coverage. Be doping and alternate Te and S doping were also applied for the fabrication of ultrashallow sidewall tunnel junctions. As a result, these tunnel junctions have shown record peak current densities of up to 31,000 A/cm2 at RT.

AB - Impurity-doped p+ and n+-GaAs epitaxial thin layers were grown on (001) GaAs substrates by molecular layer epitaxy (MLE) using an intermittent supply of AsH3 and TEG in an ultra high vacuum. The surface stoichiometry before the introduction of the impurity precursor was controlled by changing the gas supply sequences and supply time. It was shown that the incorporation of Be is extremely enhanced when the layer is exposed to Be(MeCp)2 after TEG supply. When DETe was supplied to a GaAs surface covered with S, the incorporation of Te was enhanced and it was shown that the concentration of Te increased with increasing S coverage. Be doping and alternate Te and S doping were also applied for the fabrication of ultrashallow sidewall tunnel junctions. As a result, these tunnel junctions have shown record peak current densities of up to 31,000 A/cm2 at RT.

KW - Atomic layer epitaxy

KW - GaAs

KW - Impurity doping

KW - Surface stoichiometry

KW - Tunnel junction

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DO - 10.1016/j.tsf.2004.06.056

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VL - 464-465

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EP - 127

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

Impurity doping in molecular layer epitaxy of GaAs and its application to ultrashallow sidewall tunnel junctions

Abstract

Keywords

ASJC Scopus subject areas

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