Improving threshold-voltage uniformity of 0.1 μm InP-based MODFETs with different gate layouts

D. Xu, T. Enoki, Tetsuya Suemitsu, Y. Umeda, Y. Yamane, Y. Ishii

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

It is shown that the threshold-voltage uniformity of 0.1μm InAlAs/InGaAs-based modulation-doped field-effect transistors with different numbers of gate fingers and different gate widths can be improved when a thin cap-layer structure is employed. This improvement is based on the reduction of the recess time. This reduction suppresses the difference in etching that results from the different etching rates caused by the different electrochemical effects that occur because of the varied gate layouts.

Original languageEnglish
Pages (from-to)1614-1615
Number of pages2
JournalElectronics Letters
Volume34
Issue number16
DOIs
Publication statusPublished - 1998 Aug 6
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Improving threshold-voltage uniformity of 0.1 μm InP-based MODFETs with different gate layouts'. Together they form a unique fingerprint.

Cite this