Improving the reliability and the insulation properties of gate oxide in the gate injection mode by using a new procedure of (100) Si surface and Si/SiO2 interface treatments

Takeshi Ohkawa, Osamu Nakamura, Shigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new two-step processing combination, for MOS devices improvement, is presented. It is composed of a pregate oxidation of (100) Si surface atomic scale flattening, which improves only the device breakdown reliability. Adding a postgate oxidation annealing step, using nitrogen monoxide (NO) gas mixture, reduces the degradation of the leakage current, which results from current stress application. A MOSFET with a gate oxide grown on an atomic scale flattened Si surface, exhibits a superior ID-VD characteristics, with respect to MOSFET fabricated on conventionally treated Si surface.

Original languageEnglish
Pages (from-to)2957-2959
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume48
Issue number12
DOIs
Publication statusPublished - 2001 Dec 1

Keywords

  • Atomic scale Si surface flattening
  • Current stress
  • Gate injection
  • Gate oxide
  • Leakage current
  • Nitrogen-monoxide annealing
  • Reliability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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