Improving the purity of GaN grown by the ammonothermal method with in-autoclave gas-phase acidic mineralizer synthesis

D. Tomida, S. F. Chichibu, Y. Kagamitani, Q. Bao, K. Hazu, R. Simura, K. Sugiyama, C. Yokoyama, T. Ishiguro, T. Fukuda

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

In-autoclave synthesis of a gas-phase acidic mineralizer was investigated for high-purity GaN growth by the ammonothermal (AT) method. To reduce oxygen contamination of GaN from highly hygroscopic NH 4Cl powder, purified NH 3 and HCl gases were introduced sequentially fed into a Pt-lined autoclave to synthesize NH 4Cl within the autoclave. The autoclave was pre-charged with GaN seed wafers and polycrystalline precursors, and carefully dehydrated under dynamic vacuum. Because of the decrease in oxygen concentration, the lattice parameter approached the intrinsic value. The Ga-polar layers exhibit a near-band-edge emission peak at room temperature.

Original languageEnglish
Pages (from-to)80-84
Number of pages5
JournalJournal of Crystal Growth
Volume348
Issue number1
DOIs
Publication statusPublished - 2012 Jun 1

Keywords

  • A1. Impurity
  • A2. Ammonothermal
  • A2. Growth from solutions
  • B1. Gallium nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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