Improving the integrity of Ti barrier layer in Cu-TSVs through self-formed TiSix for via-last TSV technology

Murugesan Mariappan, Jichel Bea, Takafumi Fukushima, Makoto Motoyoshi, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With in the process temperature limit of less than 400 °C for via last technology, a simple method to improve the barrier ability of Ti layer in through Si via (TSV) has been studied. After annealing the TSV structures in vacuum at temperatures up to 400 °C, we did observe a tremendous improvement in leak current characteristics for SiO2 dielectric. It was found that the self-formed TiSix at the interface between Cu and SiO2 during the sputter deposition of Ti barrier layer was converted into an amorphous TiOx and SiOx upon vacuum annealing. This simple vacuum annealing of Cu-TSVs is a promising approach for using Ti as barrier layer in via-last 3D-integration.

Original languageEnglish
Title of host publication2016 IEEE International 3D Systems Integration Conference, 3DIC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509013999
DOIs
Publication statusPublished - 2017 Jul 5
Event2016 IEEE International 3D Systems Integration Conference, 3DIC 2016 - San Francisco, United States
Duration: 2016 Nov 82016 Nov 11

Publication series

Name2016 IEEE International 3D Systems Integration Conference, 3DIC 2016

Other

Other2016 IEEE International 3D Systems Integration Conference, 3DIC 2016
CountryUnited States
CitySan Francisco
Period16/11/816/11/11

Keywords

  • Cu-TSV
  • Ti Barrier layer
  • XPS

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials
  • Computer Networks and Communications

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