Improving resistance change with temperature and thermal stability in Fe 3 O 4 films for higherature resistors

Kohei Fujiwara, Satoshi Tsubota, Hidekazu Tanaka

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We investigated the electrical properties of Fe 3 O 4 films grown on MgO (001) substrates by pulsed-laser deposition for use as higherature resistors. By systematically examining the thickness-dependent resistivity and magnetoresistance, we found that a film thickness of approximately 200 nm was critical to obtaining a small, bulk-like temperature coefficient of resistance at high temperature. We improved the thermal stability of Fe 3 O 4 films by surface passivation with an insulating Al 2 O 3 layer. By combining these findings, we achieved a resistance change as small as 13% over a temperature range of -40 °C to 250 °C, satisfying a basic requirement of higherature resistors.

Original languageEnglish
Article number011003
JournalApplied Physics Express
Issue number1
Publication statusPublished - 2019 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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