Improving reliability of IGBT surface electrode for 200 °c operation

Tomohiro Nishimura, Yoshinari Ikeda, Hiroaki Hokazono, Eiji Mochizuki, Yoshikazu Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The surface barrier effect due to nickel (Ni) film on aluminum (Al) surface electrode of insulated gate bipolar transistor (IGBT) via power cycling (P/C) test at the maximal junction temperature (Tjmax) of 200 °C and thermal cycling (T/C) test in the -55 °C to 200 °C range has been carefully investigated. The difference of coefficient of thermal expansion (CTE) between Al and Ni and the stiffness of Ni played a key role to prevent mass transfer phenomena such as a migration of Al grain boundaries. We show that long P/C and T/C lifetime under high temperature operating condition can be achieved with the conventional IGBT module using our technique.

Original languageEnglish
Title of host publication2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
PublisherIEEE Computer Society
Pages2870-2873
Number of pages4
ISBN (Print)9781479927050
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
Event7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 - Hiroshima, Japan
Duration: 2014 May 182014 May 21

Publication series

Name2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

Other

Other7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
CountryJapan
CityHiroshima
Period14/5/1814/5/21

Keywords

  • 200 °C operation
  • barrier layer
  • reliability
  • surface electrode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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