@inproceedings{bf8af519519a48b48e7a260fad4abc23,
title = "Improving reliability of IGBT surface electrode for 200 °c operation",
abstract = "The surface barrier effect due to nickel (Ni) film on aluminum (Al) surface electrode of insulated gate bipolar transistor (IGBT) via power cycling (P/C) test at the maximal junction temperature (Tjmax) of 200 °C and thermal cycling (T/C) test in the -55 °C to 200 °C range has been carefully investigated. The difference of coefficient of thermal expansion (CTE) between Al and Ni and the stiffness of Ni played a key role to prevent mass transfer phenomena such as a migration of Al grain boundaries. We show that long P/C and T/C lifetime under high temperature operating condition can be achieved with the conventional IGBT module using our technique.",
keywords = "200 °C operation, barrier layer, reliability, surface electrode",
author = "Tomohiro Nishimura and Yoshinari Ikeda and Hiroaki Hokazono and Eiji Mochizuki and Yoshikazu Takahashi",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/IPEC.2014.6870088",
language = "English",
isbn = "9781479927050",
series = "2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014",
publisher = "IEEE Computer Society",
pages = "2870--2873",
booktitle = "2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014",
note = "7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 ; Conference date: 18-05-2014 Through 21-05-2014",
}