Improving program/erase endurance by controlling the inter-poly process in flash memory

Masahiro Ushiyama, Hideo Miura, Hideyuki Yashima, Tetsuo Adachi, Toshiaki Nishimoto, Kazuhiro Komori, Yoshiaki Kamigaki, Masataka Kato, Hitoshi Kume, Yuzuru Ohji

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


Using poly-Si gate MOS capacitors, the tunnel oxide degradation due to high electric field stress is shown to be accelerated by the oxidation of the Si3N4 film in inter-poly ONO films and by high-temperature annealing. Microscopic Raman spectroscopy confirms that increased tensile stress in poly-Si gates leads to tunnel oxide degradation. Therefore, using CVD-SiO2 film as the top oxide in inter-poly ONO films or using only a CVD-SiO2 film as the inter-poly film, and reducing the high-temperature annealing time after poly-Si gate formation, will significantly increase the program/erase endurance of flash memory.

Original languageEnglish
Pages (from-to)18-23
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA
Duration: 1995 Apr 41995 Apr 6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality


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