Improving program/erase endurance by controlling the inter-poly process in flash memory

Masahiro Ushiyama; Hideo Miura; Hideyuki Yashima; Tetsuo Adachi; Toshiaki Nishimoto; Kazuhiro Komori; Yoshiaki Kamigaki; Masataka Kato; Hitoshi Kume; Yuzuru Ohji

doi:10.1109/relphy.1995.513647

Improving program/erase endurance by controlling the inter-poly process in flash memory

Masahiro Ushiyama, Hideo Miura, Hideyuki Yashima, Tetsuo Adachi, Toshiaki Nishimoto, Kazuhiro Komori, Yoshiaki Kamigaki, Masataka Kato, Hitoshi Kume, Yuzuru Ohji

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Using poly-Si gate MOS capacitors, the tunnel oxide degradation due to high electric field stress is shown to be accelerated by the oxidation of the Si₃N₄ film in inter-poly ONO films and by high-temperature annealing. Microscopic Raman spectroscopy confirms that increased tensile stress in poly-Si gates leads to tunnel oxide degradation. Therefore, using CVD-SiO₂ film as the top oxide in inter-poly ONO films or using only a CVD-SiO₂ film as the inter-poly film, and reducing the high-temperature annealing time after poly-Si gate formation, will significantly increase the program/erase endurance of flash memory.

Original language	English
Pages (from-to)	18-23
Number of pages	6
Journal	Annual Proceedings - Reliability Physics (Symposium)
DOIs	https://doi.org/10.1109/relphy.1995.513647
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA Duration: 1995 Apr 4 → 1995 Apr 6

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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10.1109/relphy.1995.513647

Cite this

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title = "Improving program/erase endurance by controlling the inter-poly process in flash memory",

abstract = "Using poly-Si gate MOS capacitors, the tunnel oxide degradation due to high electric field stress is shown to be accelerated by the oxidation of the Si3N4 film in inter-poly ONO films and by high-temperature annealing. Microscopic Raman spectroscopy confirms that increased tensile stress in poly-Si gates leads to tunnel oxide degradation. Therefore, using CVD-SiO2 film as the top oxide in inter-poly ONO films or using only a CVD-SiO2 film as the inter-poly film, and reducing the high-temperature annealing time after poly-Si gate formation, will significantly increase the program/erase endurance of flash memory.",

author = "Masahiro Ushiyama and Hideo Miura and Hideyuki Yashima and Tetsuo Adachi and Toshiaki Nishimoto and Kazuhiro Komori and Yoshiaki Kamigaki and Masataka Kato and Hitoshi Kume and Yuzuru Ohji",

year = "1995",

doi = "10.1109/relphy.1995.513647",

language = "English",

pages = "18--23",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings ; Conference date: 04-04-1995 Through 06-04-1995",

}

TY - JOUR

T1 - Improving program/erase endurance by controlling the inter-poly process in flash memory

AU - Ushiyama, Masahiro

AU - Miura, Hideo

AU - Yashima, Hideyuki

AU - Adachi, Tetsuo

AU - Nishimoto, Toshiaki

AU - Komori, Kazuhiro

AU - Kamigaki, Yoshiaki

AU - Kato, Masataka

AU - Kume, Hitoshi

AU - Ohji, Yuzuru

PY - 1995

Y1 - 1995

N2 - Using poly-Si gate MOS capacitors, the tunnel oxide degradation due to high electric field stress is shown to be accelerated by the oxidation of the Si3N4 film in inter-poly ONO films and by high-temperature annealing. Microscopic Raman spectroscopy confirms that increased tensile stress in poly-Si gates leads to tunnel oxide degradation. Therefore, using CVD-SiO2 film as the top oxide in inter-poly ONO films or using only a CVD-SiO2 film as the inter-poly film, and reducing the high-temperature annealing time after poly-Si gate formation, will significantly increase the program/erase endurance of flash memory.

AB - Using poly-Si gate MOS capacitors, the tunnel oxide degradation due to high electric field stress is shown to be accelerated by the oxidation of the Si3N4 film in inter-poly ONO films and by high-temperature annealing. Microscopic Raman spectroscopy confirms that increased tensile stress in poly-Si gates leads to tunnel oxide degradation. Therefore, using CVD-SiO2 film as the top oxide in inter-poly ONO films or using only a CVD-SiO2 film as the inter-poly film, and reducing the high-temperature annealing time after poly-Si gate formation, will significantly increase the program/erase endurance of flash memory.

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U2 - 10.1109/relphy.1995.513647

DO - 10.1109/relphy.1995.513647

M3 - Conference article

AN - SCOPUS:0029224825

SN - 0099-9512

SP - 18

EP - 23

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings

Y2 - 4 April 1995 through 6 April 1995

ER -

Improving program/erase endurance by controlling the inter-poly process in flash memory

Abstract

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