Improving electrical characteristics of W/HfO2/In 0.53Ga0.47As gate stacks by altering deposition techniques

D. Zade, K. Kakushima, T. Kanda, Y. C. Lin, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, E. Y. Chang, K. Natori, T. Hattori, H. Iwai

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