Improving electrical characteristics of W/HfO2/In 0.53Ga0.47As gate stacks by altering deposition techniques

D. Zade; K. Kakushima; T. Kanda; Y. C. Lin; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; E. Y. Chang; K. Natori; T. Hattori; H. Iwai

doi:10.1016/j.mee.2011.03.068

Improving electrical characteristics of W/HfO₂/In _0.53Ga_0.47As gate stacks by altering deposition techniques

D. Zade, K. Kakushima, T. Kanda, Y. C. Lin, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, E. Y. Chang, K. Natori, T. Hattori, H. Iwai

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO₂ on electrical characteristics of W/HfO ₂/n-In_0.53Ga_0.47As capacitors are investigated. It is found that by depositing a thin HfO₂ layer at the interface when substrate temperature is raised to 300 °C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO₂ thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO₂deposition at 300 °C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition.

Original language	English
Pages (from-to)	1109-1112
Number of pages	4
Journal	Microelectronic Engineering
Volume	88
Issue number	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.068
Publication status	Published - 2011 Jul
Externally published	Yes

Keywords

Bulk trap
Frequency dispersion
High-k
InGaAs
Interface state density

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2011.03.068

Cite this

Improving electrical characteristics of W/HfO₂/In _0.53Ga_0.47As gate stacks by altering deposition techniques. / Zade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.

In: Microelectronic Engineering, Vol. 88, No. 7, 07.2011, p. 1109-1112.

Research output: Contribution to journal › Article › peer-review

@article{a3ed28aa3cca4c4f968a4ee3f80afc07,

title = "Improving electrical characteristics of W/HfO2/In 0.53Ga0.47As gate stacks by altering deposition techniques",

abstract = "The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO2 on electrical characteristics of W/HfO 2/n-In0.53Ga0.47As capacitors are investigated. It is found that by depositing a thin HfO2 layer at the interface when substrate temperature is raised to 300 °C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO2 thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO2deposition at 300 °C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition.",

keywords = "Bulk trap, Frequency dispersion, High-k, InGaAs, Interface state density",

author = "D. Zade and K. Kakushima and T. Kanda and Lin, {Y. C.} and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and Chang, {E. Y.} and K. Natori and T. Hattori and H. Iwai",

note = "Funding Information: This study was supported by Japan Science and Technology Agency (JST) .",

year = "2011",

month = jul,

doi = "10.1016/j.mee.2011.03.068",

language = "English",

volume = "88",

pages = "1109--1112",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "7",

}

TY - JOUR

T1 - Improving electrical characteristics of W/HfO2/In 0.53Ga0.47As gate stacks by altering deposition techniques

AU - Zade, D.

AU - Kakushima, K.

AU - Kanda, T.

AU - Lin, Y. C.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Chang, E. Y.

AU - Natori, K.

AU - Hattori, T.

AU - Iwai, H.

N1 - Funding Information: This study was supported by Japan Science and Technology Agency (JST) .

PY - 2011/7

Y1 - 2011/7

N2 - The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO2 on electrical characteristics of W/HfO 2/n-In0.53Ga0.47As capacitors are investigated. It is found that by depositing a thin HfO2 layer at the interface when substrate temperature is raised to 300 °C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO2 thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO2deposition at 300 °C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition.

AB - The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO2 on electrical characteristics of W/HfO 2/n-In0.53Ga0.47As capacitors are investigated. It is found that by depositing a thin HfO2 layer at the interface when substrate temperature is raised to 300 °C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO2 thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO2deposition at 300 °C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition.

KW - Bulk trap

KW - Frequency dispersion

KW - High-k

KW - InGaAs

KW - Interface state density

UR - http://www.scopus.com/inward/record.url?scp=79958033743&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958033743&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2011.03.068

DO - 10.1016/j.mee.2011.03.068

M3 - Article

AN - SCOPUS:79958033743

VL - 88

SP - 1109

EP - 1112

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 7

ER -