Abstract
The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO2 on electrical characteristics of W/HfO 2/n-In0.53Ga0.47As capacitors are investigated. It is found that by depositing a thin HfO2 layer at the interface when substrate temperature is raised to 300 °C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO2 thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO2deposition at 300 °C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition.
Original language | English |
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Pages (from-to) | 1109-1112 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 88 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2011 Jul |
Externally published | Yes |
Keywords
- Bulk trap
- Frequency dispersion
- High-k
- InGaAs
- Interface state density
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering