Improving electrical characteristics of W/HfO2/In 0.53Ga0.47As gate stacks by altering deposition techniques

D. Zade, K. Kakushima, T. Kanda, Y. C. Lin, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, E. Y. Chang, K. Natori, T. Hattori, H. Iwai

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO2 on electrical characteristics of W/HfO 2/n-In0.53Ga0.47As capacitors are investigated. It is found that by depositing a thin HfO2 layer at the interface when substrate temperature is raised to 300 °C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO2 thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO2deposition at 300 °C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition.

Original languageEnglish
Pages (from-to)1109-1112
Number of pages4
JournalMicroelectronic Engineering
Volume88
Issue number7
DOIs
Publication statusPublished - 2011 Jul
Externally publishedYes

Keywords

  • Bulk trap
  • Frequency dispersion
  • High-k
  • InGaAs
  • Interface state density

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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