Improvements in resonance frequency and T0 value by 1.5 μm InGaAs MQW lasers grown by MOVPE

S. Takano, T. Sasaki, H. Yamada, M. Kitamura, I. Mito, T. Suzuki

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

High quality InGaAs/InP quantum well structures and 1.5 μm MQW lasers, grown by low pressure MOVPE are reported. PL linewidth, PL peak energy shift, X-ray satellite peaks and transmission spectroscopy have demonstrated that the InGaAs/InP quantum wells were of high quality. The first improvements in T0 and resonance frequency in 1.5 μm MQW lasers are reported. Superior performances due to a quantum effect are: (1) high T0 value, 105 K (15-45°C), (2) large TE/TM mode gain difference, 45 cm-1 and (3) high resonance frequency, 4 GHz/mW 1 2.

Original languageEnglish
Pages (from-to)857-862
Number of pages6
JournalJournal of Crystal Growth
Volume93
Issue number1-4
DOIs
Publication statusPublished - 1988

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Improvements in resonance frequency and T<sub>0</sub> value by 1.5 μm InGaAs MQW lasers grown by MOVPE'. Together they form a unique fingerprint.

Cite this