Improvement of Zr film purity by using a purified sputtering target and negative substrate bias voltage

J. W. Lim, J. W. Bae, Y. F. Zhu, S. Lee, Koji Mimura, M. Isshiki

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report an improvement of the purity of Zr films using a purified sputtering target and a negative substrate bias voltage. The Zr films were deposited on Si (100) substrates using a non-mass separated ion beam deposition system. Glow discharge mass spectrometry (GDMS) was used for trace impurity analysis in the Zr films deposited on a low-purity or a high-purity target and with or without a negative substrate bias voltage. Results showed that the sputtering target purity noticeably affects impurity concentrations in deposited films, which suggests that purer films are obtainable by increasing the sputtering target purity. This study further established that by applying a negative substrate bias voltage, much purer films are obtainable through prevention of an influx of impurities into the films during deposition.

Original languageEnglish
Pages (from-to)1899-1901
Number of pages3
JournalSurface and Coatings Technology
Volume201
Issue number3-4
DOIs
Publication statusPublished - 2006 Oct 5

Keywords

  • Bias voltage
  • Impurity
  • Target purity
  • Thin films
  • Zirconium

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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