Improvement of Zr film purity by using a purified sputtering target and negative substrate bias voltage

J. W. Lim; J. W. Bae; Y. F. Zhu; S. Lee; K. Mimura; M. Isshiki

doi:10.1016/j.surfcoat.2006.01.009

Improvement of Zr film purity by using a purified sputtering target and negative substrate bias voltage

J. W. Lim, J. W. Bae, Y. F. Zhu, S. Lee, K. Mimura, M. Isshiki

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report an improvement of the purity of Zr films using a purified sputtering target and a negative substrate bias voltage. The Zr films were deposited on Si (100) substrates using a non-mass separated ion beam deposition system. Glow discharge mass spectrometry (GDMS) was used for trace impurity analysis in the Zr films deposited on a low-purity or a high-purity target and with or without a negative substrate bias voltage. Results showed that the sputtering target purity noticeably affects impurity concentrations in deposited films, which suggests that purer films are obtainable by increasing the sputtering target purity. This study further established that by applying a negative substrate bias voltage, much purer films are obtainable through prevention of an influx of impurities into the films during deposition.

Original language	English
Pages (from-to)	1899-1901
Number of pages	3
Journal	Surface and Coatings Technology
Volume	201
Issue number	3-4
DOIs	https://doi.org/10.1016/j.surfcoat.2006.01.009
Publication status	Published - 2006 Oct 5

Keywords

Bias voltage
Impurity
Target purity
Thin films
Zirconium

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Improvement of Zr film purity by using a purified sputtering target and negative substrate bias voltage",

abstract = "We report an improvement of the purity of Zr films using a purified sputtering target and a negative substrate bias voltage. The Zr films were deposited on Si (100) substrates using a non-mass separated ion beam deposition system. Glow discharge mass spectrometry (GDMS) was used for trace impurity analysis in the Zr films deposited on a low-purity or a high-purity target and with or without a negative substrate bias voltage. Results showed that the sputtering target purity noticeably affects impurity concentrations in deposited films, which suggests that purer films are obtainable by increasing the sputtering target purity. This study further established that by applying a negative substrate bias voltage, much purer films are obtainable through prevention of an influx of impurities into the films during deposition.",

keywords = "Bias voltage, Impurity, Target purity, Thin films, Zirconium",

author = "Lim, {J. W.} and Bae, {J. W.} and Zhu, {Y. F.} and S. Lee and K. Mimura and M. Isshiki",

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TY - JOUR

T1 - Improvement of Zr film purity by using a purified sputtering target and negative substrate bias voltage

AU - Lim, J. W.

AU - Bae, J. W.

AU - Zhu, Y. F.

AU - Lee, S.

AU - Mimura, K.

AU - Isshiki, M.

PY - 2006/10/5

Y1 - 2006/10/5

N2 - We report an improvement of the purity of Zr films using a purified sputtering target and a negative substrate bias voltage. The Zr films were deposited on Si (100) substrates using a non-mass separated ion beam deposition system. Glow discharge mass spectrometry (GDMS) was used for trace impurity analysis in the Zr films deposited on a low-purity or a high-purity target and with or without a negative substrate bias voltage. Results showed that the sputtering target purity noticeably affects impurity concentrations in deposited films, which suggests that purer films are obtainable by increasing the sputtering target purity. This study further established that by applying a negative substrate bias voltage, much purer films are obtainable through prevention of an influx of impurities into the films during deposition.

AB - We report an improvement of the purity of Zr films using a purified sputtering target and a negative substrate bias voltage. The Zr films were deposited on Si (100) substrates using a non-mass separated ion beam deposition system. Glow discharge mass spectrometry (GDMS) was used for trace impurity analysis in the Zr films deposited on a low-purity or a high-purity target and with or without a negative substrate bias voltage. Results showed that the sputtering target purity noticeably affects impurity concentrations in deposited films, which suggests that purer films are obtainable by increasing the sputtering target purity. This study further established that by applying a negative substrate bias voltage, much purer films are obtainable through prevention of an influx of impurities into the films during deposition.

KW - Bias voltage

KW - Impurity

KW - Target purity

KW - Thin films

KW - Zirconium

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Improvement of Zr film purity by using a purified sputtering target and negative substrate bias voltage

Abstract

Keywords

ASJC Scopus subject areas

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