Improvement of thermal stability of magnetoresistive random access memory device with SiN protective film deposited by high-density plasma chemical vapor deposition

Katsumi Suemitsu, Yuichi Kawano, Hiroaki Utsumi, Hiroaki Honjo, Ryusuke Nebashi, Shinsaku Saito, Norikazu Ohshima, Tadahiko Sugibayashi, Hiromitsu Hada, Tatsuhiko Nohisa, Tadashi Shimazu, Masahiko Inoue, Naoki Kasai

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

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Engineering & Materials Science

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