Improvement of thermal stability of magnetoresistive random access memory device with SiN protective film deposited by high-density plasma chemical vapor deposition

Katsumi Suemitsu, Yuichi Kawano, Hiroaki Utsumi, Hiroaki Honjo, Ryusuke Nebashi, Shinsaku Saito, Norikazu Ohshima, Tadahiko Sugibayashi, Hiromitsu Hada, Tatsuhiko Nohisa, Tadashi Shimazu, Masahiko Inoue, Naoki Kasai

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

Embedded magnetoresistive random access memory (MRAM) with multi-level interconnects necessitates that magnetic tunnel junction (MTJ) devices have a thermal stability of 350 °C or higher during fabrication. We have improved thermal stability of MRAM devices using SiN protective film deposited by high-density plasma chemical vapor deposition (HDP-CVD) at 200 °C. The MTJ devices with HDP-CVD SiN protective film did not degrade after post-annealing at 350 °C, which suggests that the HDP-CVD process reduced oxide metal on the etched surface of the MTJ devices and that the SiN film blocked H2O diffusion from the interlayer dielectric film during post-annealing at 350 °C. We also fabricated a 1-kbit MRAM array and experimentally demonstrated thermal stability at 350 °C.

Original languageEnglish
Pages (from-to)2714-2718
Number of pages5
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25
Externally publishedYes

Keywords

  • High-density plasma chemical vapor deposition (HDP-CVD)
  • Magnetic tunnel junction (MTJ)
  • Magnetization switching
  • Magnetoresistive random access memory (MRAM)
  • Protective film
  • SiN
  • Thermal stability

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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