Improvement of the surface roughness of LTPS thin films with additional laser irradiation

Fuminobu Hamano, Akira Mizutani, Kaname Imokawa, Daisuke Nakamura, Tetsuya Goto, Hiroshi Ikenoue

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


A well-known major problem in thin-film transistor (TFT) manufacturing is the protrusions that form on low-temperature polysilicon thin films after excimer laser annealing, which, in turn, induce gate leakage current in the TFTs. In this paper, we report the use of additional laser irradiation to reduce the height of protrusions.

Original languageEnglish
Pages (from-to)322-324
Number of pages3
JournalProceedings of the International Display Workshops
Publication statusPublished - 2021 Dec 9
Event27th International Display Workshops, IDW 2020 - Virtual, Online
Duration: 2020 Dec 92020 Dec 11


  • Excimer-laser annealing
  • Low-temperature poly-Si
  • Surface flattening
  • Thin-film transistors

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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