Abstract
A well-known major problem in thin-film transistor (TFT) manufacturing is the protrusions that form on low-temperature polysilicon thin films after excimer laser annealing, which, in turn, induce gate leakage current in the TFTs. In this paper, we report the use of additional laser irradiation to reduce the height of protrusions.
| Original language | English |
|---|---|
| Pages (from-to) | 322-324 |
| Number of pages | 3 |
| Journal | Proceedings of the International Display Workshops |
| Volume | 27 |
| Publication status | Published - 2021 Dec 9 |
| Event | 27th International Display Workshops, IDW 2020 - Virtual, Online Duration: 2020 Dec 9 → 2020 Dec 11 |
Keywords
- Excimer-laser annealing
- Low-temperature poly-Si
- Surface flattening
- Thin-film transistors
ASJC Scopus subject areas
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials