Abstract
We have studied the electrical properties of the high-quality plasma enhanced chemical vapor deposition (PECVD) silicon oxide deposited by high-density and low-ion-energy plasma at 400 °C and the effect of the plasma post-treatment on its electrical properties. Analysis of the gate voltage shift during constant current stress and the high-frequency C-V characteristics indicate that the bulk electron trap and the interface charge densities are reduced from 3.2 ± 0.1 × 1018 cm-3 and 1.5 ± 0.1 × 1011 cm-2 to 1.5 ± 0.2 × 1018 cm-3 and 4 ± 0.3 × 1010 cm-2 by the high-density and low-ion-energy plasma post-treatment, respectively. In addition, the capture cross-section of the bulk trap is 2.6 ± 0.2 × 10-18 cm2. The silicon oxide films deposited by the high-density low-ion-energy plasma and plasma post-treatment exhibit excellent properties, e.g., high-breakdown electric field (>12 MV/cm) and high charge-to-breakdown. These properties of the films have approached those of high-temperature thermal oxide films.
Original language | English |
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Pages (from-to) | 2232-2237 |
Number of pages | 6 |
Journal | Journal of Non-Crystalline Solids |
Volume | 351 |
Issue number | 27-29 |
DOIs | |
Publication status | Published - 2005 Aug 15 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry