Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth

Takashi Aisaka, Tomoyuki Tanikawa, Takeshi Kimura, Kanako Shojiki, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Indium was introduced as a surfactant during metalorganic vapor phase epitaxial growth of nitrogen-polar GaN on c-plane sapphire tilted from 0.2 to 1.0° toward m-axis. For each sample with different tilted angle, the surfactant effect was confirmed from a scanning electron microscope and an atomic force microscope observations. In particular, for the tilted angle of 0.2°, all the hillocks, which usually exist on the nitrogen-polar GaN films on sapphire substrates with low tilted angles, disappeared. The microscopic terrace width was enlarged, and the surface roughness became small irrespective of the tilted angle, however, for the samples with higher tilted angles, the occurrence of the giant step bunching was rather enhanced. Therefore, it was confirmed that indium introduced during the nitrogen-polar GaN growth surely plays a role as a surfactant.

Original languageEnglish
Article number085501
JournalJapanese journal of applied physics
Volume53
Issue number8
DOIs
Publication statusPublished - 2014 Aug

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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