Improvement of subthreshold current transport by contact interface modification in p -type organic field-effect transistors

Masataka Kano, Takeo Minari, Kazuhito Tsukagoshi

Research output: Contribution to journalArticle

132 Citations (Scopus)

Abstract

The charge injection efficiency of organic field-effect transistors (OFETs) is found to be a critical factor determining the subthreshold characteristics of these devices. OFETs fabricated using a wide band gap organic semiconductor and gold source/drain contacts display large threshold voltage and poor subthreshold characteristics. Insertion of a metal-oxide charge injection layer at the contact/semiconductor interface lower the injection barrier height, resulting in marked improvements in threshold voltage and subthreshold slope and strong suppression of the short-channel effect. The improved subthreshold characteristics are attributed to enhanced charge injection and the consequent promotion of charge accumulation.

Original languageEnglish
Article number143304
JournalApplied Physics Letters
Volume94
Issue number14
DOIs
Publication statusPublished - 2009 Apr 17
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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