Improvement of scintillation properties in Pr Doped Lu 3Al 5O 12 scintillator by Ga and y substitutions

Kei Kamada, Takayuki Yanagida, Jan Pejchal, Martin Nikl, Takanori Endo, Kousuke Tsutumi, Yutaka Fujimoto, Akihiro Fukabori, Akira Yoshikawa

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9 Citations (Scopus)


Pr:(Lu,Y) 3(Ga,Al) 5 O 12 single crystals were grown by the micro-pulling down (μ-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu 3+ sites with Y 3+ and Al 3+ sites with Ga 3+ in garnet structure has been studied. Pr 3+ 5d-4f emission within 300-400 nm accompanied by weak Pr 3+ 4f-4f emission in 480-650 nm were observed in Ga 0-60 at.% substituted samples. Only Pr 3+ 4f-4f emission was observed in Ga 80 at.% substituted sample. The light yield of Pr:Lu 2Y 1Ga 2Al 2O 12 sample was almost the same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay of 17.9 ns (93%) and 68.0 ns (7%) were obtained using the PMT and digital oscilloscope TDS5032B. Slower decay components were reduced by Ga and Y substitution in LuAG structure.

Original languageEnglish
Article number6198315
Pages (from-to)2130-2134
Number of pages5
JournalIEEE Transactions on Nuclear Science
Issue number5 PART 2
Publication statusPublished - 2012


  • Oxides
  • scintillator materials
  • scintillators
  • single crystal growth

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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