Improvement of scintillation properties in Pr Doped Lu 3Al 5O 12 scintillator by Ga and y substitutions

Kei Kamada; Takayuki Yanagida; Jan Pejchal; Martin Nikl; Takanori Endo; Kousuke Tsutumi; Yutaka Fujimoto; Akihiro Fukabori; Akira Yoshikawa

doi:10.1109/TNS.2012.2191621

Improvement of scintillation properties in Pr Doped Lu ₃Al ₅O ₁₂ scintillator by Ga and y substitutions

Kei Kamada, Takayuki Yanagida, Jan Pejchal, Martin Nikl, Takanori Endo, Kousuke Tsutumi, Yutaka Fujimoto, Akihiro Fukabori, Akira Yoshikawa

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Pr:(Lu,Y) ₃(Ga,Al) ₅ O ₁₂ single crystals were grown by the micro-pulling down (μ-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu ³⁺ sites with Y ³⁺ and Al ³⁺ sites with Ga ³⁺ in garnet structure has been studied. Pr ³⁺ 5d-4f emission within 300-400 nm accompanied by weak Pr ³⁺ 4f-4f emission in 480-650 nm were observed in Ga 0-60 at.% substituted samples. Only Pr ³⁺ 4f-4f emission was observed in Ga 80 at.% substituted sample. The light yield of Pr:Lu ₂Y ₁Ga ₂Al ₂O ₁₂ sample was almost the same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay of 17.9 ns (93%) and 68.0 ns (7%) were obtained using the PMT and digital oscilloscope TDS5032B. Slower decay components were reduced by Ga and Y substitution in LuAG structure.

Original language	English
Article number	6198315
Pages (from-to)	2130-2134
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	59
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/TNS.2012.2191621
Publication status	Published - 2012

Keywords

Oxides
scintillator materials
scintillators
single crystal growth

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2012.2191621

Cite this

@article{4581dbed66d147e6b4bde2b3db55bd99,

title = "Improvement of scintillation properties in Pr Doped Lu 3Al 5O 12 scintillator by Ga and y substitutions",

abstract = "Pr:(Lu,Y) 3(Ga,Al) 5 O 12 single crystals were grown by the micro-pulling down (μ-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu 3+ sites with Y 3+ and Al 3+ sites with Ga 3+ in garnet structure has been studied. Pr 3+ 5d-4f emission within 300-400 nm accompanied by weak Pr 3+ 4f-4f emission in 480-650 nm were observed in Ga 0-60 at.% substituted samples. Only Pr 3+ 4f-4f emission was observed in Ga 80 at.% substituted sample. The light yield of Pr:Lu 2Y 1Ga 2Al 2O 12 sample was almost the same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay of 17.9 ns (93%) and 68.0 ns (7%) were obtained using the PMT and digital oscilloscope TDS5032B. Slower decay components were reduced by Ga and Y substitution in LuAG structure.",

keywords = "Oxides, scintillator materials, scintillators, single crystal growth",

author = "Kei Kamada and Takayuki Yanagida and Jan Pejchal and Martin Nikl and Takanori Endo and Kousuke Tsutumi and Yutaka Fujimoto and Akihiro Fukabori and Akira Yoshikawa",

note = "Funding Information: Manuscript received November 04, 2011; revised January 21, 2012; accepted February 03, 2012. Date of publication May 10, 2012; date of current version October 09, 2012. This work was mainly supported by JST Sentan and partially by a Grant in Aid for Young Scientists (B)-15686001, (A)-23686135, and Challenging Exploratory Research-23656584 from the Ministry of Education, Culture, Sports, Science and Technology of the Japanese government (MEXT). Partial financial support from Czech AV M100100910 and MSMT, no. 1M06002 projects is also gratefully acknowledged.",

year = "2012",

doi = "10.1109/TNS.2012.2191621",

language = "English",

volume = "59",

pages = "2130--2134",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 PART 2",

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TY - JOUR

T1 - Improvement of scintillation properties in Pr Doped Lu 3Al 5O 12 scintillator by Ga and y substitutions

AU - Kamada, Kei

AU - Yanagida, Takayuki

AU - Pejchal, Jan

AU - Nikl, Martin

AU - Endo, Takanori

AU - Tsutumi, Kousuke

AU - Fujimoto, Yutaka

AU - Fukabori, Akihiro

AU - Yoshikawa, Akira

N1 - Funding Information: Manuscript received November 04, 2011; revised January 21, 2012; accepted February 03, 2012. Date of publication May 10, 2012; date of current version October 09, 2012. This work was mainly supported by JST Sentan and partially by a Grant in Aid for Young Scientists (B)-15686001, (A)-23686135, and Challenging Exploratory Research-23656584 from the Ministry of Education, Culture, Sports, Science and Technology of the Japanese government (MEXT). Partial financial support from Czech AV M100100910 and MSMT, no. 1M06002 projects is also gratefully acknowledged.

PY - 2012

Y1 - 2012

N2 - Pr:(Lu,Y) 3(Ga,Al) 5 O 12 single crystals were grown by the micro-pulling down (μ-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu 3+ sites with Y 3+ and Al 3+ sites with Ga 3+ in garnet structure has been studied. Pr 3+ 5d-4f emission within 300-400 nm accompanied by weak Pr 3+ 4f-4f emission in 480-650 nm were observed in Ga 0-60 at.% substituted samples. Only Pr 3+ 4f-4f emission was observed in Ga 80 at.% substituted sample. The light yield of Pr:Lu 2Y 1Ga 2Al 2O 12 sample was almost the same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay of 17.9 ns (93%) and 68.0 ns (7%) were obtained using the PMT and digital oscilloscope TDS5032B. Slower decay components were reduced by Ga and Y substitution in LuAG structure.

AB - Pr:(Lu,Y) 3(Ga,Al) 5 O 12 single crystals were grown by the micro-pulling down (μ-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu 3+ sites with Y 3+ and Al 3+ sites with Ga 3+ in garnet structure has been studied. Pr 3+ 5d-4f emission within 300-400 nm accompanied by weak Pr 3+ 4f-4f emission in 480-650 nm were observed in Ga 0-60 at.% substituted samples. Only Pr 3+ 4f-4f emission was observed in Ga 80 at.% substituted sample. The light yield of Pr:Lu 2Y 1Ga 2Al 2O 12 sample was almost the same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay of 17.9 ns (93%) and 68.0 ns (7%) were obtained using the PMT and digital oscilloscope TDS5032B. Slower decay components were reduced by Ga and Y substitution in LuAG structure.

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KW - scintillator materials

KW - scintillators

KW - single crystal growth

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