Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma

Y. Saito, H. Takahashi, K. O. Ohtsubo, M. Hirayama, S. Sugawa, H. Aharoni, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

MOSFET subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar-H2 plasma. This mixture was chosen since Ar plasma resulted in both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented.

Original languageEnglish
Title of host publication2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages319-326
Number of pages8
ISBN (Electronic)0780365879
DOIs
Publication statusPublished - 2001 Jan 1
Event39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 - Orlando, United States
Duration: 2001 Apr 302001 May 3

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2001-January
ISSN (Print)1541-7026

Other

Other39th Annual IEEE International Reliability Physics Symposium, IRPS 2001
CountryUnited States
CityOrlando
Period01/4/3001/5/3

Keywords

  • Gases
  • Hydrogen
  • MOSFET circuits
  • Microwave generation
  • Plasma applications
  • Plasma devices
  • Plasma measurements
  • Plasma properties
  • Subthreshold current
  • Surface cleaning

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Saito, Y., Takahashi, H., Ohtsubo, K. O., Hirayama, M., Sugawa, S., Aharoni, H., & Ohmi, T. (2001). Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma. In 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual (pp. 319-326). [922922] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2001-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2001.922922