Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma

Y. Saito, Hiroyuki Takahashi, K. Ohtsubo, Masaki Hirayama, Shigetoshi Sugawa, H. Aharoni, T. Ohmi

Research output: Contribution to journalConference article

Abstract

MOSFET's subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar/H2 plasma. This mixture was chosen since Ar plasma resulted both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented.

Original languageEnglish
Pages (from-to)319-326
Number of pages8
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 2001 Jan 1
Event39th Annual International Reliability Physics Symposium - Orlando, FL, United States
Duration: 2001 Apr 302001 May 3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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