Improvement of local deep level transient spectroscopy for microscopic evaluation of SiO2/4H-SiC interfaces

Yuji Yamagishi, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate our new local deep level spectroscopy system improved for more accurate analysis of trap states at SiO2/4H-SiC interfaces. Full waveforms of the local capacitance transient with the amplitude of attofarads and the time scale of microseconds were obtained and quantitatively analyzed. The local energy distribution of interface state density in the energy range of EC − Eit = 0.31–0.38 eV was obtained. Two-dimensional mapping of the interface states showed inhomogeneous contrasts with the lateral spatial scale of several hundreds of nanometers, suggesting that the physical origin of the trap states at SiO2/SiC interfaces is likely to be microscopically clustered.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials, 2017
EditorsRobert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley, Aivars Lelis
PublisherTrans Tech Publications Ltd
Pages289-292
Number of pages4
ISBN (Print)9783035711455
DOIs
Publication statusPublished - 2018
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017 - Columbia, United States
Duration: 2017 Sep 172017 Sep 22

Publication series

NameMaterials Science Forum
Volume924 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017
CountryUnited States
CityColumbia
Period17/9/1717/9/22

Keywords

  • 4H-SiC
  • DLTS
  • Density of interface states
  • MOS interface
  • Microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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