Improvement of interfacial properties with interfacial layer in La2O3/Ge structure

J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

The electrical characteristics and interfacial properties of La2O3/Ge structures under various post-deposition annealing (PDA) conditions are studied. We found that the interfacial Ge oxide layer reduced the Dit, while redundant growth of the oxide led to increment of CET. In order to satisfy small CET and low Dit, appropriate interfacial layer (IL) thickness is assumed to be 1.0-1.5 nm. On the other hand, Ge sub-oxide in the IL caused to increase hysteresis. Instead, by introducing the Ge chemical oxide, an interfacial La-germanate layer formed with PDA at 500 °C in N2, which could reduced both the hysteresis and Dit.

Original languageEnglish
Pages (from-to)2336-2339
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number9-10
DOIs
Publication statusPublished - 2007 Sep
Externally publishedYes

Keywords

  • Germanate
  • Germanium
  • High-k
  • Interface trap density
  • LaO
  • Lanthanum oxide
  • PDA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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