It was experimentally found that the higher epitaxy was achieved in the growth of the SmBa2Cu3Oy films on the textured BaZrOs layer than that on the textured NiO layer. Although it is difficult to explain the difference by simply the idea of the lattice mismatching, the consideration of the interfacial energy including the chemical factor gives the preference in the higher epitaxy of the growth on the BZO due to the similarity of the crystal structure. The idea was confirmed by the TEM observation and the first principle calculation of the interfacial energies. Furthermore, the influence of the interfacial energy for the epitaxy in the growth was discussed and it was clarified that the system with the low interfacial energy is suitable for the nucleation and the fast lateral growth of the aligned grains.
|Number of pages||13|
|Publication status||Published - 2005 Dec 14|
|Event||Epitaxial Growth of Functional Oxides - Proceedings of the International Symposium - Orlando, FL, United States|
Duration: 2003 Oct 12 → 2003 Oct 17
|Other||Epitaxial Growth of Functional Oxides - Proceedings of the International Symposium|
|Period||03/10/12 → 03/10/17|
ASJC Scopus subject areas