Improvement of high-temperature creep resistance in fine-grained Al2O3 by Zr4+ segregation in grain boundaries

H. Yoshida, K. Okada, Y. Ikuhara, T. Sakuma

    Research output: Contribution to journalArticle

    60 Citations (Scopus)

    Abstract

    The high-temperature creep resistance in Al2O3 is improved greatly by ZrO2 doping. Zirconium ions are found to be segregated in Al2O3 grain boundaries. The activation energies for creep in high-purity Al2O3 and ZrO2-doped Al2O3 are estimated to be 430 and 650 kJ mol-1 respectively. The grain boundary diffusivity of Al ions is expected to be reduced by the segregation of Zr4+ in the grain boundaries.

    Original languageEnglish
    Pages (from-to)9-14
    Number of pages6
    JournalPhilosophical Magazine Letters
    Volume76
    Issue number1
    DOIs
    Publication statusPublished - 1997 Jul

    ASJC Scopus subject areas

    • Condensed Matter Physics

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