Epitaxial L10 -FePt (001) dot arrays were fabricated through the use of a microfabrication process. The lateral size of square dots was changed in the range of 0.2 to 5 μm. The coercivity (Hc) increased after patterning a continuous film to dot arrays. Furthermore, Hc was drastically enhanced by post-annealing, and Hc exceeding 20 kOe was achieved for the dots with 0.2 × 0.2 μm2 annealed at 600°C, in contrast to the continuous film showing low Hcof 1kOe. The enhancement of Hc for dot arrays upon annealing was attributed to the decrease of structure defects caused by the damage due to the microfabrication, which provide the nucleation sites where reversed domains are generated at a low field.
- Domain wall displacement
- Dot array
- FePt ordered alloy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering