Improvement of hard magnetic properties in microfabricated L1 0-FePt dot arrays upon post-annealing

Takeshi Seki; Toshiyuki Shima; Kay Yakushiji; Koki Takanashi; Guo Qing Li; Shunji Ishio

doi:10.1109/TMAG.2005.854787

Improvement of hard magnetic properties in microfabricated L1 ₀-FePt dot arrays upon post-annealing

Takeshi Seki, Toshiyuki Shima, Kay Yakushiji, Koki Takanashi, Guo Qing Li, Shunji Ishio

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Epitaxial L1₀ -FePt (001) dot arrays were fabricated through the use of a microfabrication process. The lateral size of square dots was changed in the range of 0.2 to 5 μm. The coercivity (H_c) increased after patterning a continuous film to dot arrays. Furthermore, H_c was drastically enhanced by post-annealing, and H_c exceeding 20 kOe was achieved for the dots with 0.2 × 0.2 μm² annealed at 600°C, in contrast to the continuous film showing low H_cof 1kOe. The enhancement of H_c for dot arrays upon annealing was attributed to the decrease of structure defects caused by the damage due to the microfabrication, which provide the nucleation sites where reversed domains are generated at a low field.

Original language	English
Pages (from-to)	3604-3606
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2005.854787
Publication status	Published - 2005 Oct

Keywords

Domain wall displacement
Dot array
FePt ordered alloy
Microfabrication
Post-annealing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2005.854787

Cite this

@article{0c05686214034554b8aa349356135a24,

title = "Improvement of hard magnetic properties in microfabricated L1 0-FePt dot arrays upon post-annealing",

abstract = "Epitaxial L10 -FePt (001) dot arrays were fabricated through the use of a microfabrication process. The lateral size of square dots was changed in the range of 0.2 to 5 μm. The coercivity (Hc) increased after patterning a continuous film to dot arrays. Furthermore, Hc was drastically enhanced by post-annealing, and Hc exceeding 20 kOe was achieved for the dots with 0.2 × 0.2 μm2 annealed at 600°C, in contrast to the continuous film showing low Hcof 1kOe. The enhancement of Hc for dot arrays upon annealing was attributed to the decrease of structure defects caused by the damage due to the microfabrication, which provide the nucleation sites where reversed domains are generated at a low field.",

keywords = "Domain wall displacement, Dot array, FePt ordered alloy, Microfabrication, Post-annealing",

author = "Takeshi Seki and Toshiyuki Shima and Kay Yakushiji and Koki Takanashi and Li, {Guo Qing} and Shunji Ishio",

note = "Funding Information: A part of the structural characterization was performed at Laboratory for Advanced Materials, IMR, Tohoku University. The authors thank Dr. S. Mitani for useful discussion and Y. Murakami for technical assistance. This work was supported by the Special Coordination Funds for Promoting Science and Technology on “Nanohetero Metallic Materials” from the Ministry of Education, Culture, Sports, Science and Technology (MEXT).",

year = "2005",

month = oct,

doi = "10.1109/TMAG.2005.854787",

language = "English",

volume = "41",

pages = "3604--3606",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Improvement of hard magnetic properties in microfabricated L1 0-FePt dot arrays upon post-annealing

AU - Seki, Takeshi

AU - Shima, Toshiyuki

AU - Yakushiji, Kay

AU - Takanashi, Koki

AU - Li, Guo Qing

AU - Ishio, Shunji

N1 - Funding Information: A part of the structural characterization was performed at Laboratory for Advanced Materials, IMR, Tohoku University. The authors thank Dr. S. Mitani for useful discussion and Y. Murakami for technical assistance. This work was supported by the Special Coordination Funds for Promoting Science and Technology on “Nanohetero Metallic Materials” from the Ministry of Education, Culture, Sports, Science and Technology (MEXT).

PY - 2005/10

Y1 - 2005/10

N2 - Epitaxial L10 -FePt (001) dot arrays were fabricated through the use of a microfabrication process. The lateral size of square dots was changed in the range of 0.2 to 5 μm. The coercivity (Hc) increased after patterning a continuous film to dot arrays. Furthermore, Hc was drastically enhanced by post-annealing, and Hc exceeding 20 kOe was achieved for the dots with 0.2 × 0.2 μm2 annealed at 600°C, in contrast to the continuous film showing low Hcof 1kOe. The enhancement of Hc for dot arrays upon annealing was attributed to the decrease of structure defects caused by the damage due to the microfabrication, which provide the nucleation sites where reversed domains are generated at a low field.

AB - Epitaxial L10 -FePt (001) dot arrays were fabricated through the use of a microfabrication process. The lateral size of square dots was changed in the range of 0.2 to 5 μm. The coercivity (Hc) increased after patterning a continuous film to dot arrays. Furthermore, Hc was drastically enhanced by post-annealing, and Hc exceeding 20 kOe was achieved for the dots with 0.2 × 0.2 μm2 annealed at 600°C, in contrast to the continuous film showing low Hcof 1kOe. The enhancement of Hc for dot arrays upon annealing was attributed to the decrease of structure defects caused by the damage due to the microfabrication, which provide the nucleation sites where reversed domains are generated at a low field.

KW - Domain wall displacement

KW - Dot array

KW - FePt ordered alloy

KW - Microfabrication

KW - Post-annealing

UR - http://www.scopus.com/inward/record.url?scp=27744597566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27744597566&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2005.854787

DO - 10.1109/TMAG.2005.854787

M3 - Article

AN - SCOPUS:27744597566

VL - 41

SP - 3604

EP - 3606

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 10

ER -