Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin Ichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Abstract We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality.

Original languageEnglish
Article number6820
Pages (from-to)173-178
Number of pages6
JournalSolid-State Electronics
Volume113
DOIs
Publication statusPublished - 2015 Jul 20
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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