Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

Yukinori Morita; Takahiro Mori; Shinji Migita; Wataru Mizubayashi; Koichi Fukuda; Takashi Matsukawa; Kazuhiko Endo; Shin Ichi O'uchi; Yongxun Liu; Meishoku Masahara; Hiroyuki Ota

doi:10.1016/j.sse.2015.05.031

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin Ichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Abstract We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality.

Original language	English
Article number	6820
Pages (from-to)	173-178
Number of pages	6
Journal	Solid-State Electronics
Volume	113
DOIs	https://doi.org/10.1016/j.sse.2015.05.031
Publication status	Published - 2015 Jul 20
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2015.05.031

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Morita, Y., Mori, T., Migita, S., Mizubayashi, W., Fukuda, K., Matsukawa, T., Endo, K., O'uchi, S. I., Liu, Y., Masahara, M., & Ota, H. (2015). Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors. Solid-State Electronics, 113, 173-178. [6820]. https://doi.org/10.1016/j.sse.2015.05.031

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors. / Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin Ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki.

In: Solid-State Electronics, Vol. 113, 6820, 20.07.2015, p. 173-178.

Research output: Contribution to journal › Article › peer-review

Morita, Y, Mori, T, Migita, S, Mizubayashi, W, Fukuda, K, Matsukawa, T, Endo, K, O'uchi, SI, Liu, Y, Masahara, M & Ota, H 2015, 'Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors', Solid-State Electronics, vol. 113, 6820, pp. 173-178. https://doi.org/10.1016/j.sse.2015.05.031

Morita, Yukinori ; Mori, Takahiro ; Migita, Shinji ; Mizubayashi, Wataru ; Fukuda, Koichi ; Matsukawa, Takashi ; Endo, Kazuhiko ; O'uchi, Shin Ichi ; Liu, Yongxun ; Masahara, Meishoku ; Ota, Hiroyuki. / Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors. In: Solid-State Electronics. 2015 ; Vol. 113. pp. 173-178.

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title = "Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors",

abstract = "Abstract We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality.",

author = "Yukinori Morita and Takahiro Mori and Shinji Migita and Wataru Mizubayashi and Koichi Fukuda and Takashi Matsukawa and Kazuhiko Endo and O'uchi, {Shin Ichi} and Yongxun Liu and Meishoku Masahara and Hiroyuki Ota",

note = "Funding Information: The work was supported by the Japan Society for the Promotion of Science through the First Program, “Development of Core Technologies for Green Nanoelectronics” initiated by the Council for Science and Technology Policy. The authors express their thanks to Dr. N. Yokoyama for useful discussions and encouragement. Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.",

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AU - Mori, Takahiro

AU - Migita, Shinji

AU - Mizubayashi, Wataru

AU - Fukuda, Koichi

AU - Matsukawa, Takashi

AU - Endo, Kazuhiko

AU - O'uchi, Shin Ichi

AU - Liu, Yongxun

AU - Masahara, Meishoku

AU - Ota, Hiroyuki

N1 - Funding Information: The work was supported by the Japan Society for the Promotion of Science through the First Program, “Development of Core Technologies for Green Nanoelectronics” initiated by the Council for Science and Technology Policy. The authors express their thanks to Dr. N. Yokoyama for useful discussions and encouragement. Publisher Copyright: © 2015 Elsevier Ltd. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.

PY - 2015/7/20

Y1 - 2015/7/20

N2 - Abstract We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality.

AB - Abstract We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality.

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Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

Abstract

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