Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

Yukinori Morita; Takahiro Mori; Shinji Migita; Wataru Mizubayashi; Koichi Fukuda; Takashi Matsukawa; Kazuhiko Endo; Shin Ichi O'uchi; Yongxun Liu; Meishoku Masahara; Hiroyuki Ota

doi:10.1016/j.sse.2015.05.031

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin Ichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Abstract We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality.

Original language	English
Article number	6820
Pages (from-to)	173-178
Number of pages	6
Journal	Solid-State Electronics
Volume	113
DOIs	https://doi.org/10.1016/j.sse.2015.05.031
Publication status	Published - 2015 Jul 20
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2015.05.031

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Morita, Y., Mori, T., Migita, S., Mizubayashi, W., Fukuda, K., Matsukawa, T., Endo, K., O'uchi, S. I., Liu, Y., Masahara, M., & Ota, H. (2015). Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors. Solid-State Electronics, 113, 173-178. [6820]. https://doi.org/10.1016/j.sse.2015.05.031

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors. / Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin Ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki.

In: Solid-State Electronics, Vol. 113, 6820, 20.07.2015, p. 173-178.

Research output: Contribution to journal › Article › peer-review

Morita, Y, Mori, T, Migita, S, Mizubayashi, W, Fukuda, K, Matsukawa, T, Endo, K, O'uchi, SI, Liu, Y, Masahara, M & Ota, H 2015, 'Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors', Solid-State Electronics, vol. 113, 6820, pp. 173-178. https://doi.org/10.1016/j.sse.2015.05.031

Morita, Yukinori ; Mori, Takahiro ; Migita, Shinji ; Mizubayashi, Wataru ; Fukuda, Koichi ; Matsukawa, Takashi ; Endo, Kazuhiko ; O'uchi, Shin Ichi ; Liu, Yongxun ; Masahara, Meishoku ; Ota, Hiroyuki. / Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors. In: Solid-State Electronics. 2015 ; Vol. 113. pp. 173-178.

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