Abstract
Abstract We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality.
Original language | English |
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Article number | 6820 |
Pages (from-to) | 173-178 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 113 |
DOIs | |
Publication status | Published - 2015 Jul 20 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry