@inproceedings{2a8e4aa64db5449b8f2889ea3eab1b6b,
title = "Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance",
abstract = "We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improves the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improve step-by-step with interface quality.",
keywords = "TFET, epitaxial growth, subthreshold slope",
author = "Y. Morita and T. Mori and S. Migita and W. Mizubayashi and K. Fukuda and T. Matsukawa and K. Endo and S. O'Uchi and Liu, {Y. X.} and M. Masahara and H. Ota",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 44th European Solid-State Device Research Conference, ESSDERC 2014 ; Conference date: 22-09-2014 Through 26-09-2014",
year = "2014",
month = nov,
day = "5",
doi = "10.1109/ESSDERC.2014.6948790",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "182--185",
editor = "Roberto Bez and Gaudenzio Meneghesso and Paolo Pavan",
booktitle = "European Solid-State Device Research Conference",
}