Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance

Y. Morita, T. Mori, S. Migita, W. Mizubayashi, K. Fukuda, T. Matsukawa, K. Endo, S. O'Uchi, Y. X. Liu, M. Masahara, H. Ota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improves the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improve step-by-step with interface quality.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsRoberto Bez, Gaudenzio Meneghesso, Paolo Pavan
PublisherIEEE Computer Society
Pages182-185
Number of pages4
ISBN (Electronic)9781479943784
DOIs
Publication statusPublished - 2014 Nov 5
Externally publishedYes
Event44th European Solid-State Device Research Conference, ESSDERC 2014 - Venezia Lido, Italy
Duration: 2014 Sep 222014 Sep 26

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other44th European Solid-State Device Research Conference, ESSDERC 2014
Country/TerritoryItaly
CityVenezia Lido
Period14/9/2214/9/26

Keywords

  • TFET
  • epitaxial growth
  • subthreshold slope

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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