TY - JOUR
T1 - Improvement of electron mobility above 100,000 cm2 V -1 s-1 in MgxZn1-xO/ZnO heterostructures
AU - Akasaka, Shunsuke
AU - Tsukazaki, Atsushi
AU - Nakahara, Ken
AU - Ohtomo, Akira
AU - Kawasaki, Masashi
PY - 2011/8/1
Y1 - 2011/8/1
N2 - We discuss the electron mobility (μ) of a two-dimensional electron gas (2DEG) confined at the MgxZn1-xO/ZnO heterointerface grown by molecular-beam epitaxy. With increasing x from 0.05 to 0.2, the electron density (n) was enhanced and μ was suppressed due to interface roughness or alloy disorder scattering. By the optimization of growth conditions, in particular growth rate, ionized impurity scattering in the ZnO channel could be reduced significantly. With tuning n by a gate voltage on top-gated Hall-bar devices, the peak μ at 2K was enhanced to 130,000 cm2 V -1 s-1 at n = 3 × 1011 cm-2.
AB - We discuss the electron mobility (μ) of a two-dimensional electron gas (2DEG) confined at the MgxZn1-xO/ZnO heterointerface grown by molecular-beam epitaxy. With increasing x from 0.05 to 0.2, the electron density (n) was enhanced and μ was suppressed due to interface roughness or alloy disorder scattering. By the optimization of growth conditions, in particular growth rate, ionized impurity scattering in the ZnO channel could be reduced significantly. With tuning n by a gate voltage on top-gated Hall-bar devices, the peak μ at 2K was enhanced to 130,000 cm2 V -1 s-1 at n = 3 × 1011 cm-2.
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U2 - 10.1143/JJAP.50.080215
DO - 10.1143/JJAP.50.080215
M3 - Article
AN - SCOPUS:80051965090
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8 PART 1
M1 - 080215
ER -