Improvement of electron mobility above 100,000 cm2 V -1 s-1 in MgxZn1-xO/ZnO heterostructures

Shunsuke Akasaka; Atsushi Tsukazaki; Ken Nakahara; Akira Ohtomo; Masashi Kawasaki

doi:10.1143/JJAP.50.080215

Improvement of electron mobility above 100,000 cm² V ^-1 s^-1 in Mg_xZn_1-xO/ZnO heterostructures

Shunsuke Akasaka, Atsushi Tsukazaki, Ken Nakahara, Akira Ohtomo, Masashi Kawasaki

Materials Property Division

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

We discuss the electron mobility (μ) of a two-dimensional electron gas (2DEG) confined at the Mg_xZn_1-xO/ZnO heterointerface grown by molecular-beam epitaxy. With increasing x from 0.05 to 0.2, the electron density (n) was enhanced and μ was suppressed due to interface roughness or alloy disorder scattering. By the optimization of growth conditions, in particular growth rate, ionized impurity scattering in the ZnO channel could be reduced significantly. With tuning n by a gate voltage on top-gated Hall-bar devices, the peak μ at 2K was enhanced to 130,000 cm² V ^-1 s^-1 at n = 3 × 10¹¹ cm^-2.

Original language	English
Article number	080215
Journal	Japanese journal of applied physics
Volume	50
Issue number	8 PART 1
DOIs	https://doi.org/10.1143/JJAP.50.080215
Publication status	Published - 2011 Aug 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Akasaka, S., Tsukazaki, A., Nakahara, K., Ohtomo, A., & Kawasaki, M. (2011). Improvement of electron mobility above 100,000 cm² V ^-1 s^-1 in Mg_xZn_1-xO/ZnO heterostructures. Japanese journal of applied physics, 50(8 PART 1), [080215]. https://doi.org/10.1143/JJAP.50.080215

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