Improvement of electrical property for Pb(Zr0.53Ti 0.47)O3 ferroelectric thin film deposited by sol-gel method on SRO electrode

Vu Ngoc Hung, Le Van Minh, Bui Thi Huyen, Nguyen Duc Minh

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5 Citations (Scopus)


Pb(Zr,Ti)O3 thin films with Zr/Ti ratio of 53:47 were deposited on SRO/YSZ/Si(100) and Pt/Ti/SiO2/Si(100) substrates using the sol-gel method. The thermal process of the PZT thin films included treating two-step pyrolysis, at 300°C for 30 minutes and 400°C for 10 minutes, and annealing crystallization, at 600°C for 10 minutes in air ambient. The remnant polarization and the coercive field of the PZT/SRO/YSZ/Si were 28 μC/cm2 and 65 kV/cm2, and those of the PZT/Pt/Ti/SiO2/Si were 12 μC/cm2 and 79 kV/cm 2. This indicates that the use of the metallic SRO-electrodes significantly improves electrical property of PZT piezoelectric thin film as compared with a metal-electrode Pt.

Original languageEnglish
Article number012063
JournalJournal of Physics: Conference Series
Publication statusPublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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