Improvement of creep resistance in polycrystalline Al2O3 by Lu-doping

H. Yoshida; Y. Ikuhara; T. Sakuma

doi:10.1016/s1466-6049(99)00035-5

Improvement of creep resistance in polycrystalline Al₂O₃ by Lu-doping

H. Yoshida, Y. Ikuhara, T. Sakuma

Research output: Contribution to journal › Article

18 Citations (Scopus)

Abstract

High-temperature creep resistance in high-purity Al₂O₃ (nominal purity of 99.99%) and Al₂O₃ doped with 0.05 mol% Lu₂O₃ was examined by uniaxial compression testing in air at a constant load at temperatures between 1150 and 1350°C and the applied stress range of 10~200 MPa. The creep resistance was found to highly improve in this temperature range by doping of Lu₂O₃ into polycrystalline Al₂O₃ even at the level of 0.05 mol%. The stress exponent was about 2 in the two materials, but the activation energy for creep was different; 410 kJ/mol for undoped Al₂O₃ and 780 kJ/mol for Lu₂O₃-doped Al₂O₃. Lutetium ions were found to segregate in Al₂O₃ grain boundaries without forming amorphous phase or second-phase particles. The improved creep resistance in polycrystalline Al₂O₃ due to Lu₂O₃ doping was attributed to the segregation of Lu ions in Al₂O₃ grain boundaries probably due to the suppression of grain boundary diffusion. The change of chemical bonding state in grain boundaries with the segregation of Lu ions is supposed by HREM-EELS analysis.

Original language	English
Pages (from-to)	229-234
Number of pages	6
Journal	International Journal of Inorganic Materials
Volume	1
Issue number	3-4
DOIs	https://doi.org/10.1016/s1466-6049(99)00035-5
Publication status	Published - 1999

Keywords

A. ceramics, structural materials
C. electron energy loss spectroscopy (EELS)
D. mechanical properties

ASJC Scopus subject areas

Materials Chemistry

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10.1016/s1466-6049(99)00035-5

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Yoshida, H., Ikuhara, Y., & Sakuma, T. (1999). Improvement of creep resistance in polycrystalline Al₂O₃ by Lu-doping. International Journal of Inorganic Materials, 1(3-4), 229-234. https://doi.org/10.1016/s1466-6049(99)00035-5

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abstract = "High-temperature creep resistance in high-purity Al2O3 (nominal purity of 99.99%) and Al2O3 doped with 0.05 mol% Lu2O3 was examined by uniaxial compression testing in air at a constant load at temperatures between 1150 and 1350°C and the applied stress range of 10~200 MPa. The creep resistance was found to highly improve in this temperature range by doping of Lu2O3 into polycrystalline Al2O3 even at the level of 0.05 mol%. The stress exponent was about 2 in the two materials, but the activation energy for creep was different; 410 kJ/mol for undoped Al2O3 and 780 kJ/mol for Lu2O3-doped Al2O3. Lutetium ions were found to segregate in Al2O3 grain boundaries without forming amorphous phase or second-phase particles. The improved creep resistance in polycrystalline Al2O3 due to Lu2O3 doping was attributed to the segregation of Lu ions in Al2O3 grain boundaries probably due to the suppression of grain boundary diffusion. The change of chemical bonding state in grain boundaries with the segregation of Lu ions is supposed by HREM-EELS analysis.",

keywords = "A. ceramics, structural materials, C. electron energy loss spectroscopy (EELS), D. mechanical properties",

author = "H. Yoshida and Y. Ikuhara and T. Sakuma",

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AU - Yoshida, H.

AU - Ikuhara, Y.

AU - Sakuma, T.

PY - 1999

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AB - High-temperature creep resistance in high-purity Al2O3 (nominal purity of 99.99%) and Al2O3 doped with 0.05 mol% Lu2O3 was examined by uniaxial compression testing in air at a constant load at temperatures between 1150 and 1350°C and the applied stress range of 10~200 MPa. The creep resistance was found to highly improve in this temperature range by doping of Lu2O3 into polycrystalline Al2O3 even at the level of 0.05 mol%. The stress exponent was about 2 in the two materials, but the activation energy for creep was different; 410 kJ/mol for undoped Al2O3 and 780 kJ/mol for Lu2O3-doped Al2O3. Lutetium ions were found to segregate in Al2O3 grain boundaries without forming amorphous phase or second-phase particles. The improved creep resistance in polycrystalline Al2O3 due to Lu2O3 doping was attributed to the segregation of Lu ions in Al2O3 grain boundaries probably due to the suppression of grain boundary diffusion. The change of chemical bonding state in grain boundaries with the segregation of Lu ions is supposed by HREM-EELS analysis.

KW - A. ceramics, structural materials

KW - C. electron energy loss spectroscopy (EELS)

KW - D. mechanical properties

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