Improvement of characteristics of OTFT with bottom-contact structure and its application to a flexible liquid crystal display panel

Yoshihide Fujisaki; Toshiki Arai; Hiroshi Otake; Hirotaka Maruyama; Youji Inoue; Hideo Fujikake; Shizuo Tokito; Taiichiro Kurita

doi:10.3169/itej.60.1428

Improvement of characteristics of OTFT with bottom-contact structure and its application to a flexible liquid crystal display panel

Yoshihide Fujisaki, Toshiki Arai, Hiroshi Otake, Hirotaka Maruyama, Youji Inoue, Hideo Fujikake, Shizuo Tokito, Taiichiro Kurita

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We developed an organic thin-film transistor (OTFT) -driven 16 × 16 polymer-dispersed liquid crystal (PDLC) display panel on a flexible plastic film. We fabricated low-voltage-operation bottom-contact (BC) OTFT with Ta ₂O₅ gate insulator, using photolithography method. This transistor is suitable for both scaling down and increasing the number of pixels, however its performance is inferior to that of top-contact OTFT because of contamination and defects on the surface of the insulator, and leakage-current of channel region. We have reduced the current of the OTFT by optimizing the pentacene deposition area. We used O₂ plasma, UV cleaning and HMDS as surface treatments suitable for Ta₂O₅ gate insulator, to improve the characteristics. The OTFT showed a good carrier mobility of 0.3 cm²/Vs, a high current on/off ratio of over 10 ⁶ and a low operating drain voltage of -6V. We also successively confirmed display operation of the fabricated 16 × 16 PDLC display panel with a low driving voltage of 13 volts.

Original language	English
Pages (from-to)	1428-1434
Number of pages	7
Journal	Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers
Volume	60
Issue number	9
DOIs	https://doi.org/10.3169/itej.60.1428
Publication status	Published - 2006 Sep
Externally published	Yes

ASJC Scopus subject areas

Media Technology
Computer Science Applications
Electrical and Electronic Engineering

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10.3169/itej.60.1428

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Fujisaki, Y., Arai, T., Otake, H., Maruyama, H., Inoue, Y., Fujikake, H., Tokito, S., & Kurita, T. (2006). Improvement of characteristics of OTFT with bottom-contact structure and its application to a flexible liquid crystal display panel. Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers, 60(9), 1428-1434. https://doi.org/10.3169/itej.60.1428

Improvement of characteristics of OTFT with bottom-contact structure and its application to a flexible liquid crystal display panel. / Fujisaki, Yoshihide; Arai, Toshiki; Otake, Hiroshi et al.

In: Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers, Vol. 60, No. 9, 09.2006, p. 1428-1434.

Research output: Contribution to journal › Article › peer-review

Fujisaki, Y, Arai, T, Otake, H, Maruyama, H, Inoue, Y, Fujikake, H, Tokito, S & Kurita, T 2006, 'Improvement of characteristics of OTFT with bottom-contact structure and its application to a flexible liquid crystal display panel', Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers, vol. 60, no. 9, pp. 1428-1434. https://doi.org/10.3169/itej.60.1428

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title = "Improvement of characteristics of OTFT with bottom-contact structure and its application to a flexible liquid crystal display panel",

abstract = "We developed an organic thin-film transistor (OTFT) -driven 16 × 16 polymer-dispersed liquid crystal (PDLC) display panel on a flexible plastic film. We fabricated low-voltage-operation bottom-contact (BC) OTFT with Ta 2O5 gate insulator, using photolithography method. This transistor is suitable for both scaling down and increasing the number of pixels, however its performance is inferior to that of top-contact OTFT because of contamination and defects on the surface of the insulator, and leakage-current of channel region. We have reduced the current of the OTFT by optimizing the pentacene deposition area. We used O2 plasma, UV cleaning and HMDS as surface treatments suitable for Ta2O5 gate insulator, to improve the characteristics. The OTFT showed a good carrier mobility of 0.3 cm2/Vs, a high current on/off ratio of over 10 6 and a low operating drain voltage of -6V. We also successively confirmed display operation of the fabricated 16 × 16 PDLC display panel with a low driving voltage of 13 volts.",

author = "Yoshihide Fujisaki and Toshiki Arai and Hiroshi Otake and Hirotaka Maruyama and Youji Inoue and Hideo Fujikake and Shizuo Tokito and Taiichiro Kurita",

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AU - Fujisaki, Yoshihide

AU - Arai, Toshiki

AU - Otake, Hiroshi

AU - Maruyama, Hirotaka

AU - Inoue, Youji

AU - Fujikake, Hideo

AU - Tokito, Shizuo

AU - Kurita, Taiichiro

PY - 2006/9

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N2 - We developed an organic thin-film transistor (OTFT) -driven 16 × 16 polymer-dispersed liquid crystal (PDLC) display panel on a flexible plastic film. We fabricated low-voltage-operation bottom-contact (BC) OTFT with Ta 2O5 gate insulator, using photolithography method. This transistor is suitable for both scaling down and increasing the number of pixels, however its performance is inferior to that of top-contact OTFT because of contamination and defects on the surface of the insulator, and leakage-current of channel region. We have reduced the current of the OTFT by optimizing the pentacene deposition area. We used O2 plasma, UV cleaning and HMDS as surface treatments suitable for Ta2O5 gate insulator, to improve the characteristics. The OTFT showed a good carrier mobility of 0.3 cm2/Vs, a high current on/off ratio of over 10 6 and a low operating drain voltage of -6V. We also successively confirmed display operation of the fabricated 16 × 16 PDLC display panel with a low driving voltage of 13 volts.

AB - We developed an organic thin-film transistor (OTFT) -driven 16 × 16 polymer-dispersed liquid crystal (PDLC) display panel on a flexible plastic film. We fabricated low-voltage-operation bottom-contact (BC) OTFT with Ta 2O5 gate insulator, using photolithography method. This transistor is suitable for both scaling down and increasing the number of pixels, however its performance is inferior to that of top-contact OTFT because of contamination and defects on the surface of the insulator, and leakage-current of channel region. We have reduced the current of the OTFT by optimizing the pentacene deposition area. We used O2 plasma, UV cleaning and HMDS as surface treatments suitable for Ta2O5 gate insulator, to improve the characteristics. The OTFT showed a good carrier mobility of 0.3 cm2/Vs, a high current on/off ratio of over 10 6 and a low operating drain voltage of -6V. We also successively confirmed display operation of the fabricated 16 × 16 PDLC display panel with a low driving voltage of 13 volts.

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Improvement of characteristics of OTFT with bottom-contact structure and its application to a flexible liquid crystal display panel

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