Improvement of characteristics of leaky surface acoustic wave on LiTaO 3

Tetsuya Kimura; Michio Kadota; Yasuyuki Ida

doi:10.1541/ieejeiss.131.1115

Improvement of characteristics of leaky surface acoustic wave on LiTaO ₃

Tetsuya Kimura, Michio Kadota, Yasuyuki Ida

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A Leaky surface acoustic wave (LSAW) on Al-electrodes/36-48°YX- LiTaO₃ substrates have widely used as filters and duplexers in cell phones because of having a suitable electro-mechanical coupling factor, reflection coefficient and good Q-factor for cell phones. In this paper, a new LSAW structure consisted of upper Al-electrodes stacked on lower grooved Cu-electrodes in the LiTaO3 is proposed and compared with Al-electrodes (0.1)/42°YX-LiTaO₃ which has been considered the best structure ever. As the result, authors have been able to improve characteristics of the LSAW.

Original language	English
Pages (from-to)	1115-1119
Number of pages	5
Journal	IEEJ Transactions on Electronics, Information and Systems
Volume	131
Issue number	6
DOIs	https://doi.org/10.1541/ieejeiss.131.1115
Publication status	Published - 2011
Externally published	Yes

Keywords

Grooved electrodes
Leaky surface acoustic wave
Resonator

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1541/ieejeiss.131.1115

Cite this

@article{25376c94e8024abfaf44846502ed3c0a,

title = "Improvement of characteristics of leaky surface acoustic wave on LiTaO 3",

abstract = "A Leaky surface acoustic wave (LSAW) on Al-electrodes/36-48°YX- LiTaO3 substrates have widely used as filters and duplexers in cell phones because of having a suitable electro-mechanical coupling factor, reflection coefficient and good Q-factor for cell phones. In this paper, a new LSAW structure consisted of upper Al-electrodes stacked on lower grooved Cu-electrodes in the LiTaO3 is proposed and compared with Al-electrodes (0.1)/42°YX-LiTaO3 which has been considered the best structure ever. As the result, authors have been able to improve characteristics of the LSAW.",

keywords = "Grooved electrodes, Leaky surface acoustic wave, Resonator",

author = "Tetsuya Kimura and Michio Kadota and Yasuyuki Ida",

year = "2011",

doi = "10.1541/ieejeiss.131.1115",

language = "English",

volume = "131",

pages = "1115--1119",

journal = "IEEJ Transactions on Electronics, Information and Systems",

issn = "0385-4221",

publisher = "The Institute of Electrical Engineers of Japan",

number = "6",

}

TY - JOUR

T1 - Improvement of characteristics of leaky surface acoustic wave on LiTaO 3

AU - Kimura, Tetsuya

AU - Kadota, Michio

AU - Ida, Yasuyuki

PY - 2011

Y1 - 2011

N2 - A Leaky surface acoustic wave (LSAW) on Al-electrodes/36-48°YX- LiTaO3 substrates have widely used as filters and duplexers in cell phones because of having a suitable electro-mechanical coupling factor, reflection coefficient and good Q-factor for cell phones. In this paper, a new LSAW structure consisted of upper Al-electrodes stacked on lower grooved Cu-electrodes in the LiTaO3 is proposed and compared with Al-electrodes (0.1)/42°YX-LiTaO3 which has been considered the best structure ever. As the result, authors have been able to improve characteristics of the LSAW.

AB - A Leaky surface acoustic wave (LSAW) on Al-electrodes/36-48°YX- LiTaO3 substrates have widely used as filters and duplexers in cell phones because of having a suitable electro-mechanical coupling factor, reflection coefficient and good Q-factor for cell phones. In this paper, a new LSAW structure consisted of upper Al-electrodes stacked on lower grooved Cu-electrodes in the LiTaO3 is proposed and compared with Al-electrodes (0.1)/42°YX-LiTaO3 which has been considered the best structure ever. As the result, authors have been able to improve characteristics of the LSAW.

KW - Grooved electrodes

KW - Leaky surface acoustic wave

KW - Resonator

UR - http://www.scopus.com/inward/record.url?scp=80052404091&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052404091&partnerID=8YFLogxK

U2 - 10.1541/ieejeiss.131.1115

DO - 10.1541/ieejeiss.131.1115

M3 - Article

AN - SCOPUS:80052404091

VL - 131

SP - 1115

EP - 1119

JO - IEEJ Transactions on Electronics, Information and Systems

JF - IEEJ Transactions on Electronics, Information and Systems

SN - 0385-4221

IS - 6

ER -