Improvement of C-V characteristics and control of interlayer growth of rare earth oxide stabilized zirconia epitaxial gate dielectrics

Takanori Kiguchi; Naoki Wakiya; Kazuo Shinozaki; Nobuyasu Mizutani

Improvement of C-V characteristics and control of interlayer growth of rare earth oxide stabilized zirconia epitaxial gate dielectrics

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of doping several rare earth oxides on the capacitance-voltage (C-V) characteristics and the SiO₂ interlayer growth of ZrO₂ based gate dielectrics on (001)Si were examined. The width of the C-V hysteresis window of La₂O₃ stabilized ZrO₂ (LaSZ) gate dielectric was only 0.2V, on the other hands, that of Sc₂O₃ stabilized ZrO₂ (ScSZ) gate dielectric was 1.4V. HRTEM analysis indicated that the growth of SiO₂ interlayer of RSZ (R=Sm,Nd,La) gate dielectric was about 1nm, which was less than half of the ScSZ one. These results indicate the advantage of the ZrO₂ gate dielectric doped with rare earth oxide composed of larger ionic radius cation.

Original language	English
Pages (from-to)	137-140
Number of pages	4
Journal	Key Engineering Materials
Volume	248
Publication status	Published - 2003 Jan 1
Externally published	Yes

Keywords

Buffer layer
C-V characteristics
Gate dielectrics
HRTEM
Ion drift
Rare earth element
SiO
Zirconia

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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@article{30ef4d7edbed493b92b252791c4e5bd3,

title = "Improvement of C-V characteristics and control of interlayer growth of rare earth oxide stabilized zirconia epitaxial gate dielectrics",

abstract = "The effects of doping several rare earth oxides on the capacitance-voltage (C-V) characteristics and the SiO2 interlayer growth of ZrO2 based gate dielectrics on (001)Si were examined. The width of the C-V hysteresis window of La2O3 stabilized ZrO2 (LaSZ) gate dielectric was only 0.2V, on the other hands, that of Sc2O3 stabilized ZrO2 (ScSZ) gate dielectric was 1.4V. HRTEM analysis indicated that the growth of SiO2 interlayer of RSZ (R=Sm,Nd,La) gate dielectric was about 1nm, which was less than half of the ScSZ one. These results indicate the advantage of the ZrO2 gate dielectric doped with rare earth oxide composed of larger ionic radius cation.",

keywords = "Buffer layer, C-V characteristics, Gate dielectrics, HRTEM, Ion drift, Rare earth element, SiO, Zirconia",

author = "Takanori Kiguchi and Naoki Wakiya and Kazuo Shinozaki and Nobuyasu Mizutani",

year = "2003",

month = jan,

day = "1",

language = "English",

volume = "248",

pages = "137--140",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Improvement of C-V characteristics and control of interlayer growth of rare earth oxide stabilized zirconia epitaxial gate dielectrics

AU - Kiguchi, Takanori

AU - Wakiya, Naoki

AU - Shinozaki, Kazuo

AU - Mizutani, Nobuyasu

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The effects of doping several rare earth oxides on the capacitance-voltage (C-V) characteristics and the SiO2 interlayer growth of ZrO2 based gate dielectrics on (001)Si were examined. The width of the C-V hysteresis window of La2O3 stabilized ZrO2 (LaSZ) gate dielectric was only 0.2V, on the other hands, that of Sc2O3 stabilized ZrO2 (ScSZ) gate dielectric was 1.4V. HRTEM analysis indicated that the growth of SiO2 interlayer of RSZ (R=Sm,Nd,La) gate dielectric was about 1nm, which was less than half of the ScSZ one. These results indicate the advantage of the ZrO2 gate dielectric doped with rare earth oxide composed of larger ionic radius cation.

AB - The effects of doping several rare earth oxides on the capacitance-voltage (C-V) characteristics and the SiO2 interlayer growth of ZrO2 based gate dielectrics on (001)Si were examined. The width of the C-V hysteresis window of La2O3 stabilized ZrO2 (LaSZ) gate dielectric was only 0.2V, on the other hands, that of Sc2O3 stabilized ZrO2 (ScSZ) gate dielectric was 1.4V. HRTEM analysis indicated that the growth of SiO2 interlayer of RSZ (R=Sm,Nd,La) gate dielectric was about 1nm, which was less than half of the ScSZ one. These results indicate the advantage of the ZrO2 gate dielectric doped with rare earth oxide composed of larger ionic radius cation.

KW - Buffer layer

KW - C-V characteristics

KW - Gate dielectrics

KW - HRTEM

KW - Ion drift

KW - Rare earth element

KW - SiO

KW - Zirconia

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VL - 248

SP - 137

EP - 140

JO - Key Engineering Materials

JF - Key Engineering Materials

SN - 1013-9826

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