Abstract
The effects of doping several rare earth oxides on the capacitance-voltage (C-V) characteristics and the SiO2 interlayer growth of ZrO2 based gate dielectrics on (001)Si were examined. The width of the C-V hysteresis window of La2O3 stabilized ZrO2 (LaSZ) gate dielectric was only 0.2V, on the other hands, that of Sc2O3 stabilized ZrO2 (ScSZ) gate dielectric was 1.4V. HRTEM analysis indicated that the growth of SiO2 interlayer of RSZ (R=Sm,Nd,La) gate dielectric was about 1nm, which was less than half of the ScSZ one. These results indicate the advantage of the ZrO2 gate dielectric doped with rare earth oxide composed of larger ionic radius cation.
Original language | English |
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Pages (from-to) | 137-140 |
Number of pages | 4 |
Journal | Key Engineering Materials |
Volume | 248 |
Publication status | Published - 2003 Jan 1 |
Externally published | Yes |
Keywords
- Buffer layer
- C-V characteristics
- Gate dielectrics
- HRTEM
- Ion drift
- Rare earth element
- SiO
- Zirconia
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering