Improvement of annealing procedure to suppress defect generation during impurity gettering in multicrystalline silicon for solar cells

Isao Takahashi, Supawan Joonwichien, Kutsukake Kentaro, Satoru Matsushima, Ichiro Yonenaga, Noritaka Usami

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We demonstrate an improved annealing procedure to suppress defect generation during impurity gettering process. A multiple cycled annealing and cooling for impurity gettering provides higher carrier lifetime in the wafers compared with continuously annealed wafers (conventional method). Microscopic photoluminescence images revealed that dislocation propagation from grown-in dislocations and defect generation in intra grain were suppressed in samples with the multiple cycled annealing. Therefore the multiple cycled annealing procedure is concluded to be a promising technique to improve electrical property of multicrystalline silicon for solar cells.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3017-3020
Number of pages4
ISBN (Electronic)9781479943982
DOIs
Publication statusPublished - 2014 Oct 15
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 2014 Jun 82014 Jun 13

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period14/6/814/6/13

Keywords

  • annealing
  • defect
  • gettering
  • multicrystalline
  • silicon
  • solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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