Improvement of AlN crystalline quality with high epitaxial growth rates by hydride vapor phase epitaxy

Toru Nagashima, Manabu Harada, Hiroyuki Yanagi, Hiroyuki Fukuyama, Yoshinao Kumagai, Akinori Koukitu, Kazuya Takada

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

We have demonstrated that high-quality aluminium nintride (AlN) single crystal can be grown at high growth rates by hydride vapor phase epitaxy (HVPE) with a help of using AlN templates and step growth technique. A colorless and transparent AlN layer with 83 μm thick was grown at a growth rate of 57 μm/h at 1450 °C. Its full-width at half-maximum for {0 0 0 2} plane was 295 arcsec and that for {1 0 1̄ 1} plane was 432 arcsec. Grown AlN layer was transparent in the visible and ultraviolet region and a sharp absorption edge with band gap energy of 5.96 eV was confined.

Original languageEnglish
Pages (from-to)355-359
Number of pages5
JournalJournal of Crystal Growth
Volume305
Issue number2 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Jul 15

Keywords

  • A1. Crystal structure
  • A3. Hydride vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting aluminum compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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