Improvement in the Negative Bias Illumination Stress Stability for Silicon-Ion Implanted Amorphous InGaZnO Thin-Film Transistors

Tetsuya Goto, Fuminobu Imaizumi, Shigetoshi Sugawa

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Using ion implantation, we doped amorphous InGaZnO (a-IGZO) with Si and investigated how this doping influenced device performance. The Si doping increased the electrical conductivity of the a-IGZO films, showing that the Si doping had produced the electron carriers. The optimum oxygen partial pressure during a-IGZO deposition moved toward higher in the Si-implanted a-IGZO thin-film transistors (TFTs) than in the undoped TFTs. In the doped TFTs, the gate bias stability against negative bias illumination stress (NBIS) improved, while the mobility remained almost the same as that without Si doping. This improvement in the NBIS stability suggests that the subgap states related to oxygen-vacancies could be reduced in the Si-implanted a-IGZO film.

Original languageEnglish
Article number7835679
Pages (from-to)345-348
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number3
DOIs
Publication statusPublished - 2017 Mar 1

Keywords

  • IGZO
  • Si ion implantation
  • Thin film transistor
  • negative bias illumination stress.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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